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arXiv · 1811.06676

Four-wave mixing and nonlinear parameter measurement in a gallium-nitride ridge waveguide

Dvir Munk·Moshe Katzman·Ohad Westreich·Moran Bin Nun·Yedidya Lior·Noam Sicron·Yossi Paltiel·Avi Zadok
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Abstract

Gallium-nitride (GaN) is a promising material platform for integrated electro-optic devices due to its wide direct bandgap, pronounced nonlinearities and high optical damage threshold. Low-loss ridge waveguides in GaN layers were recently demonstrated. In this work we provide a first report of four-wave mixing in a GaN waveguide at telecommunication wavelengths, and observe comparatively high nonlinear propagation parameters. The nonlinear coefficient of the waveguide is measured as 1.6 +/- 0.45 [W*m]-1, and the corresponding third-order nonlinear parameter of GaN is estimated as 3.4e-18 +/- 1e-18 [m^2/W]. The results suggest that GaN waveguides could be instrumental in nonlinear-optical signal processing applications.

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Dvir Munk, Moshe Katzman, Ohad Westreich, Moran Bin Nun, Yedidya Lior, Noam Sicron, Yossi Paltiel, Avi Zadok. 2018-11-16. Four-wave mixing and nonlinear parameter measurement in a gallium-nitride ridge waveguide. https://arxiv.org/abs/1811.06676

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