arXiv subjects

Moshe Katzman

Publications and source records attributed to Moshe Katzman.

4 recordsLinked to original sources

arXiv2026

Single-atom trapping in the evanescent field of an integrated photonic resonator

Strong atom-photon interactions on scalable photonic platforms hold significant potential for both atomic and photonic quantum information platforms. In particular, trapping of a single atom on a planar photonic integrated resonator at the subwavelength distances required for strong coupling to the guided modes has remained an outstanding challenge. Here we demonstrate efficient trapping of a single ultracold rubidium atom within the evanescent field of an integrated silicon-nitride microring resonator, at distances of 150-200 nm from the chip surface. Efficient, single-stroke loading process is achieved using an evanescent-field mechanism related to Sisyphus cooling, in which a single scattering event dissipates the atom's kinetic energy and transfers it into a near-surface trap. We observe logarithmic scaling of trapping durations spanning from sub-millisecond timescales up to 1 second, without continuous cooling. The trapped atom couples efficiently to the resonator, enabling on-chip photon collection, photon antibunching, and Purcell-enhanced spontaneous emission with single-atom cooperativity exceeding unity. Our results establish the potential of CMOS-compatible chip-based atom-photon interfaces for scalable quantum photonic circuits.

quant-ph↗

arXiv2022

Fault-Tolerant Directional Couplers for State Manipulation in Silicon Photonic-Integrated Circuits

Photonic integrated circuits play a central role in current and future applications such as communications, sensing, ranging, and information processing. Photonic quantum computing will also likely require an integrated optics architecture for improved stability, scalability, and performance. Fault-tolerant quantum computing mandates very accurate and robust quantum gates. In this work, we demonstrate high-fidelity directional couplers for single-qubit gates in photonic integrated waveguides, utilizing a novel scheme of detuning-modulated composite segments. Specific designs for reduced sensitivity to wavelength variations and real-world geometrical fabrication errors in waveguides width and depth are presented. Enhanced wavelength tolerance is demonstrated experimentally. The concept shows great promise for scaling high fidelity gates as part of integrated quantum optics architectures.

physics.optics↗

arXiv2020

Surface acoustic wave photonic devices in silicon on insulator

Opto-mechanical interactions in planar photonic integrated circuits draw great interest in basic research and applications. However, opto-mechanics is practically absent in the most technologically significant photonics platform: silicon on insulator. Previous demonstrations required the under-etching and suspension of silicon structures. Here we present surface acoustic wave-photonic devices in silicon on insulator, up to 8 GHz frequency. Surface waves are launched through absorption of modulated pump light in metallic gratings and thermoelastic expansion. The surface waves are detected through photo-elastic modulation of an optical probe in standard race-track resonators. Devices do not involve piezo-electric actuation, suspension of waveguides or hybrid material integration. Wavelength conversion of incident microwave signals and acoustic true time delays up to 40 ns are demonstrated on-chip. Lastly, discrete-time microwave-photonic filters with up to six taps and 20 MHz wide passbands are realized using acoustic delays. The concept is suitable for integrated microwave-photonics signal processing

physics.optics↗

arXiv2018

Four-wave mixing and nonlinear parameter measurement in a gallium-nitride ridge waveguide

Gallium-nitride (GaN) is a promising material platform for integrated electro-optic devices due to its wide direct bandgap, pronounced nonlinearities and high optical damage threshold. Low-loss ridge waveguides in GaN layers were recently demonstrated. In this work we provide a first report of four-wave mixing in a GaN waveguide at telecommunication wavelengths, and observe comparatively high nonlinear propagation parameters. The nonlinear coefficient of the waveguide is measured as 1.6 +/- 0.45 [W*m]-1, and the corresponding third-order nonlinear parameter of GaN is estimated as 3.4e-18 +/- 1e-18 [m^2/W]. The results suggest that GaN waveguides could be instrumental in nonlinear-optical signal processing applications.

physics.optics↗