Cryogenic Characerization and Modeling of Standard CMOS down to Liquid Helium Temperature for Quantum Computing

Abstract

Cryogenic characterization and modeling of 0.18um CMOS technology (1.8V and 5V) are presented in this paper. Several PMOS and NMOS transistors with different width to length ratios(W/L) were extensively characterized under various bias conditions at temperatures ranging from 300K down to 4.2K. We extracted their fundamental physical parameters and developed a compact model based on BSIM3V3. In addition to their I-V characteristics, threshold voltage(Vth) values, on/off current ratio, transconductance of the MOS transistors, and resistors on chips are measured at temperatures from 300K down to 4.2K. A simple subcircuit was built to correct the kink effect. This work provides experimental evidence for implementation of cryogenic CMOS technology, a valid industrial tape-out process model, and romotes the application of integrated circuits in cryogenic environments, including quantum measurement and control systems for quantum chips at very low temperatures.