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arXiv · 1812.05249

Phase transition and anomalous scaling in the quantum Hall transport of topological insulator Sn-Bi1.1Sb0.9Te2S devices

Faji Xie·Shuai Zhang·Qianqian Liu·Chuanying Xi·Ting-Ting Kang·Rui Wang·Boyuan Wei·Xing-Chen Pan·Minhao Zhang·Fucong Fei·Xuefeng Wang·Li Pi·Geliang L. Yu·Baigeng Wang·Fengqi Song
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Abstract

The scaling physics of quantum Hall transport in optimized topological insulators with a plateau precision of ~1/1000 e2/h is considered. Two exponential scaling regimes are observed in temperature-dependent transport dissipation, one of which accords with thermal activation behavior with a gap of 2.8 meV (> 20 K), the other being attributed to variable range hopping (1-20 K). Magnetic field-driven plateau-to-plateau transition gives scaling relations of (dR$_{xy}$/dB)$^{max}$ \propto T$^{-κ}$ and \DeltaB$^{-1}$ \propto T$^{-κ}$ with a consistent exponent of κ~ 0.2, which is half the universal value for a conventional two-dimensional electron gas. This is evidence of percolation assisted by quantum tunneling, and reveals the dominance of electron-electron interaction of the topological surface states.

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Faji Xie, Shuai Zhang, Qianqian Liu, Chuanying Xi, Ting-Ting Kang, Rui Wang, Boyuan Wei, Xing-Chen Pan, Minhao Zhang, Fucong Fei, Xuefeng Wang, Li Pi, Geliang L. Yu, Baigeng Wang, Fengqi Song. 2018-12-13. Phase transition and anomalous scaling in the quantum Hall transport of topological insulator Sn-Bi1.1Sb0.9Te2S devices. https://doi.org/10.1103/physrevb.99.081113

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