On the Ferroelectric Polarization Switching of Hafnium Zirconium Oxide in Ferroelectric/Dielectric Stack

Mengwei Si; Xiao Lyu; Peide D. Ye

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arXiv · 1812.05260

On the Ferroelectric Polarization Switching of Hafnium Zirconium Oxide in Ferroelectric/Dielectric Stack

Mengwei Si·Xiao Lyu·Peide D. Ye

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Abstract

The ferroelectric polarization switching in ferroelectric hafnium zirconium oxide (Hf0.5Zr0.5O2, HZO) in the HZO/Al2O3 ferroelectric/dielectric stack is investigated systematically by capacitance-voltage and polarization-voltage measurements. The thickness of dielectric layer is found to have a determinant impact on the ferroelectric polarization switching of ferroelectric HZO. A suppression of ferroelectricity is observed with thick dielectric layer. In the gate stacks with thin dielectric layers, a full polarization switching of the ferroelectric layer is found possible by the proposed leakage-current-assist mechanism through the ultrathin dielectric layer. Theoretical simulation results agree well with experimental data. This work clarifies some of the critical parts of the long-standing confusions and debating related to negative capacitance field-effect transistors (NC-FETs) concepts and experiments.

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Mengwei Si, Xiao Lyu, Peide D. Ye. 2018-12-13. On the Ferroelectric Polarization Switching of Hafnium Zirconium Oxide in Ferroelectric/Dielectric Stack. https://arxiv.org/abs/1812.05260

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