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arXiv · 1901.00667

Ab-initio calculation of band alignments for opto-electronic simulations

Jan Oliver Oelerich·Maria J. Weseloh·Kerstin Volz·Stephan W. Koch
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Abstract

A modified core-to-valence band maximum approach is applied to calculate band offsets of strained III/V semiconductor hetero junctions. The method is used for the analysis of (In,Ga)As/GaAs/Ga(As,Sb) multi-quantum well structures. The obtained offsets and the resulting bandstructure are used as input for the microscopic calculation of photoluminescence spectra yielding very good agreement with recent experimental results.

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Jan Oliver Oelerich, Maria J. Weseloh, Kerstin Volz, Stephan W. Koch. 2019-01-03. Ab-initio calculation of band alignments for opto-electronic simulations. https://arxiv.org/abs/1901.00667

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