arXiv subjects

Stephan W. Koch

Publications and source records attributed to Stephan W. Koch.

At least 19 recordsLinked to original sources

arXiv2022

Intrinsic Carrier Losses in Tellurium Due to Radiative and Auger Recombinations

Fully microscopic many-body models based on inputs from first principle density functional theory are used to calculate the carrier losses due to radiative- and Auger-recombinations in bulk tellurium. It is shown that Auger processes dominate the losses for carrier densities in the range typical for applications as lasers. The Auger loss depends crucially on the energetic position of the $H_6$ valence bands. At cryogenic temperatures of 50$\,$K (100$\,$K) the Auger coefficient, $C$, varies by about six (three) orders of magnitude within the range of published distances between these bands and the valence bandedge. Values for $C$ at the high and low end of these ranges are found if the distance is smaller or larger than the bandgap, respectively. At room temperature the sensitivity is reduced to about a factor of four with $C$ values ranging between $0.4$ and $1.6\times 10^{-27}$cm$^6$s$^{-1}$. Here, radiative losses dominate for carrier densities up to about $10^{16}/$cm$^3$ with a loss coefficient $B\approx 10^{-11}$cm$^3$s$^{-1}$. The radiative losses are about two to three times lower than in typical bulk III-V materials for comparable wavelengths.

cond-mat.mtrl-sci↗

arXiv2020

Low-threshold operation of GaAs-based (GaIn)As/Ga(AsSb)/(GaIn)As W-quantum well lasers emitting in the O-band

The influence of the growth conditions as well as the device design on the device performance of (GaIn)As/Ga(AsSb)/(GaIn)As "W"-quantum well lasers is investigated. To this purpose, the epitaxy process is scaled to full two inch substrates for improved homogeneity while the growth process is carried out in a single run for an improved quality. Furthermore, the optical confinement factor is increased by increasing the aluminum concentration within the cladding layers to a value of 65%. The procedure is carried out for devices with emission wavelengths of 1.26 micrometer as well as 1.30 micrometer. Differential efficiencies as high as 58% and threshold current densities as low as 0.16 kA/cm^2 are observed in case of devices emitting at 1.26 micrometer at room temperature. Furthermore, excellent characteristic temperatures of T_0=(72 plus minus 5)K and T_1=(293 plus minus 16) K are recorded in the temperature range between 10 degree Celsius and 100 degree Celsius. Devices emitting at 1.30 micrometer exhibit differential efficiencies of 31% and threshold current densities of 0.50 kA/cm^2 at room temperature. Further improvements of these properties and wavelength extension schemes are briefly discssused.

cond-mat.mtrl-sci↗

arXiv2020

Temperature-dependent spectral properties of (GaIn)As/Ga(AsSb)/(GaIn)As W-quantum well heterostructure lasers

This paper discusses the temperature-dependent properties of (GaIn)As/Ga(AsSb)/(GaIn)As W-quantum well heterostructures for laser applications based on theoretical modeling as well as experimental findings. A microscopic theory is applied to discuss band bending effects giving rise to the characteristic blue shift with increasing charge carrier density observed in type-II heterostructures. Furthermore, gain spectra for a W-quantum well heterostructure are calculated up to high charge carrier densities. At these high charge carrier densities, the interplay between multiple type-II transitions results in broad and flat gain spectra with a spectral width of approximately 160 nm. Furthermore, the temperature-dependent properties of broad-area edge-emitting lasers are analyzed using electroluminescence as well as laser characteristic measurements. A first indication for the theoretically predicted broad gain spectra is presented and the interplay between the temperature-dependent red shift and the charge carrier density-dependent blue shift is discussed. A combination of these effects results in a significant reduction of the temperature-induced red shift of the emission wavelengths and even negative shift rates of (-0.10 plusminus 0.04) nm/K are achieved.

cond-mat.mes-hall↗

arXiv2020

Extension of the LDA-1/2 method to the material class of bismuth containing III-V semiconductors

The LDA-1/2 method is employed in density functional theory calculations for the electronic structure of III-V dilute bismide systems. For the representative example of Ga(SbBi) with Bi concentrations below $10 \%$, it is shown that this method works very efficiently, especially due to its reasonably low demand on computer memory. The resulting bandstructure and wavefunctions are used to compute the interaction matrix elements that serve as input to microscopic calculations of the optical properties and intrinsic losses relevant for optoelectronic applications of dilute bismides.

cond-mat.mtrl-sci↗

arXiv2020

Ultrafast band-gap renormalization and build-up of optical gain in monolayer MoTe$_2$

The dynamics of band-gap renormalization and gain build-up in monolayer MoTe$_2$ is investigated by evaluating the non-equilibrium Dirac-Bloch equations with the incoherent carrier-carrier and carrier-phonon scattering treated via quantum-Boltzmann type scattering equations. For the case where an approximately $300$ fs-long high intensity optical pulse generates charge-carrier densities in the gain regime, the strong Coulomb coupling leads to a relaxation of excited carriers on a few fs time scale. The pump-pulse generation of excited carriers induces a large band-gap renormalization during the time scale of the pulse. Efficient phonon coupling leads to a subsequent carrier thermalization within a few ps, which defines the time scale for the optical gain build-up energetically close to the low-density exciton resonance.

cond-mat.mes-hall↗

arXiv2019

Spin-Layer- and Spin-Valley-Locking in CVD-Grown AA'- and AB-Stacked Tungsten-Disulfide Bilayers

Valley-selective optical selection rules and a spin-valley locking in transition-metal dichalcogenide (TMDC) monolayers are at the heart of "valleytronic physics", which exploits the valley degree of freedom and has been a major research topic in recent years. In contrast, valleytronic properties of TMDC bilayers have not been in the focus so much by now. Here, we report on the valleytronic properties and optical characterization of bilayers of WS2 as a representative TMDC material. In particular, we study the influence of the relative layer alignment in TMDC homo-bilayer samples on their polarization-dependent optical properties. Therefore, CVD-grown WS2 bilayer samples have been prepared that favor either the inversion symmetric AA' stacking or AB stacking without inversion symmetry during synthesis. Subsequently, a detailed analysis of reflection contrast and photoluminescence spectra under different polarization conditions has been performed. We observe circular and linear dichroism of the photoluminescence that is more pronounced for the AB stacking configuration. Our experimental findings are supported by theoretical calculations showing that the observed dichroism can be linked to optical selection rules, that maintain the spin-valley locking in the AB-stacked WS2 bilayer, whereas a spin-layer-locking is present the inversion symmetric AA' bilayer instead. Furthermore, our theoretical calculations predict a small relative shift of the excitonic resonances in both stacking configurations, which is also experimentally observed.

cond-mat.mes-hall↗

arXiv2019

Ab-initio calculation of band alignments for opto-electronic simulations

A modified core-to-valence band maximum approach is applied to calculate band offsets of strained III/V semiconductor hetero junctions. The method is used for the analysis of (In,Ga)As/GaAs/Ga(As,Sb) multi-quantum well structures. The obtained offsets and the resulting bandstructure are used as input for the microscopic calculation of photoluminescence spectra yielding very good agreement with recent experimental results.

cond-mat.mtrl-sci↗

arXiv2018

Memory effects in the long-wave infrared avalanche ionization of gases: A review of recent progress

There are currently intense efforts being directed towards extending the range and energy of long distance nonlinear pulse propagation in the atmosphere by moving to longer infrared wavelengths, with the purpose of mitigating the effects of turbulence. In addition, picosecond and longer pulse durations are being used to increase the pulse energy. While both of these tacks promise improvements in applications, such as remote sensing and directed energy, they open up fundamental issues regarding the standard model used to calculate the nonlinear optical properties of dilute gases. Amongst these issues is that for longer wavelengths and longer pulse durations, exponential growth of the laser-generated electron density, the so-called avalanche ionization, can limit the propagation range via nonlinear absorption and plasma defocusing. It is therefore important for the continued development of the field to assess the theory and role of avalanche ionization in gases for longer wavelengths. Here, after an overview of the standard model, we present a microscopically motivated approach for the analysis of avalanche ionization in gases that extends beyond the standard model and we contend is key for deepening our understanding of long distance propagation at long infrared wavelengths. Our new approach involves the mean electron kinetic energy, the plasma temperature, and the free electron density as dynamic variables. The rate of avalanche ionization is shown to depend on the full time history of the pulsed excitation, as opposed to the standard model in which the rate is proportional to the instantaneous intensity.

physics.optics↗

arXiv2018

Microscopic calculation of the optical properties and intrinsic losses in the methylammonium lead iodide perovskite system

For opto-electronic and photo-voltaic applications of perovskites, it is essential to know the optical properties and intrinsic losses of the used materials. A systematic microscopic analysis is presented for the example of methylammonium lead iodide where density functional theory is used to calculate the electronic band structure as well as the dipole and Coulomb matrix elements. These results serve as input for a many-body quantum approach used to compute the absorption, photoluminescence, and the optical and Auger losses for a wide range of application conditions. To illustrate the theory, the excitonic properties of the material system are investigated and numerical results are presented for typical photo-voltaic operation conditions and for the elevated carrier densities needed for laser operation.

cond-mat.mtrl-sci↗

arXiv2017

Observation of Inter-layer Excitons in MoSe2 Single Crystals

Interlayer excitons are observed coexisting with intralayer excitons in bi-layer, few-layer, and bulk MoSe2 single crystals by confocal reflection contrast spectroscopy. Quantitative analysis using the Dirac-Bloch-Equations provides unambiguous state assignment of all the measured resonances. The interlayer excitons in bilayer MoSe2 have a large binding energy of 153 meV, narrow linewidth of 20 meV, and their spectral weight is comparable to the commonly studied higher-order intralayer excitons. At the same time, the interlayer excitons are characterized by distinct transition energies and permanent dipole moments providing a promising high temperature and optically accessible platform for dipolar exciton physics.

cond-mat.mtrl-sci↗

arXiv2017

Valence band splitting in bulk dilute bismides

The electronic structure of bulk GaAs$_{1-x}$Bi$_x$ systems for different atomic configurations and Bi concentrations is calculated using density functional theory. The results show a Bi-induced splitting between the light-hole and heavy-hole bands at the $Γ$-point. We find a good agreement between our calculated splittings and experimental data. The magnitude of the splitting strongly depends on the local arrangement of the Bi atoms but not on the uni-directional lattice constant of the supercell. The additional influence of external strain due to epitaxial growth on GaAs substrates is studied by fixing the in-plane lattice constants.

cond-mat.mtrl-sci↗

arXiv2017

Influence of the effective layer thickness on the groundstate and excitonic properties of transition-metal dichalcogenide systems

A self-consistent scheme for the calculations of the interacting groundstate and the near bandgap optical spectra of mono- and multilayer transition-metal-dichalcogenide systems is presented. The approach combines a dielectric model for the Coulomb interaction potential in a multilayer environment, gap equations for the renormalized groundstate, and the Dirac-Wannier-equation to determine the excitonic properties. To account for the extension of the individual monolayers perpendicular to their basic plane, an effective thickness parameter in the Coulomb interaction potential is introduced. Numerical evaluations for the example of MoS$_2$ show that the resulting finite size effects lead to significant modifications in the optical spectra, reproducing the experimentally observed non hydrogenic features of the excitonic resonance series. Applying the theory for multi-layer configurations, a consistent description of the near bandgap optical properties is obtained all the way from monolayer to bulk. In addition to the well-known in-plane excitons, also interlayer excitons occur in multilayer systems suggesting a reinterpretation of experimental results obtained for bulk material.

cond-mat.mes-hall↗

arXiv2017

Ab initio calculations of the concentration dependent band gap reduction in dilute nitrides

While being of persistent interest for the integration of lattice-matched laser devices with silicon circuits, the electronic structure of dilute nitride III/V-semiconductors has presented a challenge to ab initio computational approaches. The root of this lies in the strong distortion N atoms exert on most host materials. Here, we resolve these issues by combining density functional theory calculations based on the meta-GGA functional presented by Tran and Blaha (TB09) with a supercell approach for the dilute nitride Ga(NAs). Exploring the requirements posed to supercells, we show that the distortion field of a single N atom must be allowed to decrease so far, that it does not overlap with its periodic images. This also prevents spurious electronic interactions between translational symmetric atoms, allowing to compute band gaps in very good agreement with experimentally derived reference values. These results open up the field of dilute nitride compound semiconductors to predictive ab initio calculations.

cond-mat.mtrl-sci↗

arXiv2016

Density dependent exciton dynamics and L valley anisotropy in germanium

Optical pump-THz probe spectroscopy is used to investigate the exciton formation dynamics and its intensity dependence in bulk Ge. Associated with the intra-excitonic 1s-2p transition, the gradual build-up of an absorption peak around 3.1 meV (0.75 THz) signifies the delayed exciton formation after optical pump which is accelerated for higher excitation densities. Analyzing the spectral shape of this THz absorption resonance, two distinct resonances are found which are attributed to the mass-anisotropy of L valley electrons via a microscopic theory.

cond-mat.mes-hall↗

arXiv2016

Gain spectroscopy of a type-II VECSEL chip

Using optical pump-white light probe spectroscopy the gain dynamics is investigated for a VECSEL chip which is based on a type-II heterostructure. The active region the chip consists of a GaAs/(GaIn)As/Ga(AsSb)/(GaIn)As/GaAs multiple quantum well. For this structure, a fully microscopic theory predicts a modal room temperature gain at a wavelength of 1170 nm, which is confirmed by experimental spectra. The results show a gain buildup on the type-II chip which is delayed relative to that of a type-I chip. This slower gain dynamics is attributed to a diminished cooling rate arising from reduced electron-hole scattering.

physics.optics↗

arXiv2016

Configuration Dependence of Band Gap Narrowing and Localization in Dilute GaAs_{1-x} Bi_x Alloys

Anion substitution with bismuth (Bi) in III-V semiconductors is an effective method for experimental engineering of the band gap Eg at low Bi concentrations, in particular in gallium arsenide (GaAs). The inverse Bi-concentration dependence of Eg has been found to be linear at low concentrations x and dominated by a valence band-defect level anticrossing between As and Bi occupied p levels. This dependence breaks down at high concentrations where empirical models accounting only for the As-Bi interaction are not applicable. Predictive models for the valence band hybridization require a first-principle understanding which can be obtained by density functional theory with the main challenges being the proper description of Eg and the spin-orbit coupling. By using an efficient method to include these effects, it is shown here that at high concentrations Eg is modified mainly by a Bi-Bi p orbital interaction and by the large Bi atom-induced strain. This points to the role of different atomic configurations obtained by varying the experimental growth conditions in engineering arsenide band gaps, in particular for telecommunication laser technology.

cond-mat.mtrl-sci↗

arXiv2015

Optically bright $p$-excitons indicating strong Coulomb coupling in transition-metal dichalcogenides

It is shown that the strong Coulomb coupling in intrinsic suspended semiconducting transition metal dichalcogenides can exceed the critical value needed for an excitonic ground state. The dipole-allowed optical excitations then correspond to intra-excitonic transitions such that the optically bright excitonic transitions near the Dirac points have a $p$-like symmetry whereas the $s$-like states are dipole forbidden. The large intrinsic coupling strength seems to be a generic property of the semiconducting transition metal dichalcogenides and strong Coulomb-coupling signatures in the form of the optical selection rules can be observed even in samples grown on typical substrates like SiO$_2$. For the examples of WS$_2$ and WSe$_2$, excellent agreement of the computed excitonic resonance energies with recent experiments is demonstrated.

cond-mat.mtrl-sci↗

arXiv2012

Classical theory of second-harmonic generation from magnetic metamaterials

Strong second-harmonic generation has recently been experimentally observed from metamaterials consisting of periodic arrays of metal split ring resonators with an effective negative magnetic permeability [Science, 313, 502 (2006)]. To explore the underlying physical mechanism, a classical model derived from microscopic theory is employed here. The quasi-free electrons inside the metal are approximated as a classical Coulomb-interacting electron gas, and their motion under the excitation of an external electromagnetic field is described by the cold-plasma wave equations. Through numerical simulations, it is demonstrated that the microscopic theory includes the dominant physical mechanisms bothqualitatively and quantitatively.

cond-mat.mtrl-sci↗