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arXiv · 1903.01536

Weak localization in boron nitride encapsulated bilayer MoS$_2$

Nikos Papadopoulos·Kenji Watanabe·Takashi Taniguchi·Herre S. J. van der Zant·Gary A. Steele
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Abstract

We present measurements of weak localization on hexagonal boron nitride encapsulated bilayer MoS$_2$. From the analysis we obtain information regarding the phase-coherence and the spin diffusion of the electrons. We find that the encapsulation with boron nitride provides higher mobilities in the samples, and the phase-coherence shows improvement, while the spin relaxation does not exhibit any significant enhancement compared to non-encapsulated MoS$_2$. The spin relaxation time is in the order of a few picoseconds, indicating a fast intravalley spin-flip rate. Lastly, the spin-flip rate is found to be independent from electron density in the current range, which can be explained through counteracting spin-flip scattering processes based on electron-electron Coulomb scattering and extrinsic Bychkov-Rashba spin-orbit coupling.

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Nikos Papadopoulos, Kenji Watanabe, Takashi Taniguchi, Herre S. J. van der Zant, Gary A. Steele. 2019-03-04. Weak localization in boron nitride encapsulated bilayer MoS$_2$. https://doi.org/10.1103/physrevb.99.115414

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