A Critical Review of Recent Progress on Negative Capacitance Field-Effect Transistors

Muhammad A. Alam; Mengwei Si; Peide D. Ye

doi:10.1063/1.5092684

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arXiv · 1903.03884

A Critical Review of Recent Progress on Negative Capacitance Field-Effect Transistors

Muhammad A. Alam·Mengwei Si·Peide D. Ye

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Abstract

The elegant simplicity of the device concept and the urgent need for a new "transistor" at the twilight of Moore's law have inspired many researchers in industry and academia to explore the physics and technology of negative capacitance field effect transistor (NC-FET). Although hundreds of papers have been published, the validity of quasi-static NC and the frequency-reliability limits of NC-FET are still being debated. The concept of NC - if conclusively demonstrated - will have broad impacts on device physics and technology development. Here, the authors provide a critical review of recent progress on NC-FETs research and some starting points for a coherent discussion.

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Muhammad A. Alam, Mengwei Si, Peide D. Ye. 2019-03-09. A Critical Review of Recent Progress on Negative Capacitance Field-Effect Transistors. https://doi.org/10.1063/1.5092684

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