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arXiv · 1903.04346

Unconventional gate voltage dependence of the charge conductance caused by spin-splitting Fermi surface by Rashba-type spin-orbit coupling

D. Oshima·K. Taguchi·Y. Tanaka
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Abstract

We calculate the gate voltage (Vg) dependence of charge conductance in a normal metal (NM)/two dimensional electron gas (2DEG) junction, where Rashba spin-orbit coupling and ferromagnetism exist in the 2DEG. We call this 2DEG as the ferromagnetic Rashba metal (FRM) and the chemical potential of the FRM is controlled by Vg. We clarify the physical origin of the unconventional Vg dependence of charge conductance in the NM/FRM junction found in our previous work [J. Phys. Soc. Jpn. 87, 034710 (2018)], in which the charge conductance increases with Vg, although the number of carries in FRM decreases. We calculate the momentum-resolved charge conductance. It is clarified that the origin of the unconventional Vg dependence is due to the non-monotonic change in the size of the inner Fermi surface in FRM as a function of $V_{g}$.

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D. Oshima, K. Taguchi, Y. Tanaka. 2019-03-11. Unconventional gate voltage dependence of the charge conductance caused by spin-splitting Fermi surface by Rashba-type spin-orbit coupling. https://doi.org/10.1016/j.physe.2019.113615

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