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arXiv · 1904.01912

Interfacial mechanism in the anomalous Hall effect of Co/Bi$_2$O$_3$ bilayers

Edurne Sagasta·Juan Borge·Luis Esteban·Yasutomo Omori·Martin Gradhand·YoshiChika Otani·Luis E. Hueso·Fèlix Casanova
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Abstract

Oxide interfaces are a source of spin-orbit coupling which can lead to novel spin-to-charge conversion effects. In this work the contribution of the Bi$_2$O$_3$ interface to the anomalous Hall effect of Co is experimentally studied in Co/Bi$_2$O$_3$ bilayers. We evidence a variation of 40% in the AHE of Co when a Bi$_2$O$_3$ capping layer is added to the ferromagnet. This strong variation is attributed to an additional source of asymmetric transport in Co/Bi$_2$O$_3$ bilayers that originates from the Co/Bi$_2$O$_3$ interface and contributes to the skew scattering.

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Edurne Sagasta, Juan Borge, Luis Esteban, Yasutomo Omori, Martin Gradhand, YoshiChika Otani, Luis E. Hueso, Fèlix Casanova. 2019-04-03. Interfacial mechanism in the anomalous Hall effect of Co/Bi$_2$O$_3$ bilayers. https://doi.org/10.1103/physrevb.100.100407

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