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arXiv · 1904.04698

Temperature scaling of reverse current generated in proton irradiated silicon bulk

Felix Wizemann·Andreas Gisen·Kevin Kröninger·Jens Weingarten
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Abstract

The value of the scaling parameter $E_{\text{eff}}$ of the temperature dependence for current generated in silicon bulk is investigated for highly irradiated devices. Measurements of devices irradiated to fluences above $1 \times 10^{15} n_{\text{eq}} \text{cm}^{-2} $ have shown a different temperature scaling behaviour than devices irradiated to lower fluences. This paper presents the determination of the parameter $E_{\text{eff}}$ for diodes irradiated with protons up to fluences of $3 \times 10^{15} n_{\text{eq}} \text{cm}^{-2}$ in the bias range from $0$V to $1000$V at temperatures from $-36 ^{\circ}\text{C}$ to $0 ^{\circ}\text{C}$ at different stages of annealing. It is shown that $E_{\text{eff}}$ for highly irradiated devices depends on the applied electric field: below depletion voltage, $E_{\text{eff}}$ is observed to have a lower value than above depletion voltage

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Felix Wizemann, Andreas Gisen, Kevin Kröninger, Jens Weingarten. 2019-04-09. Temperature scaling of reverse current generated in proton irradiated silicon bulk. https://doi.org/10.1088/1748-0221/14/07/p07008

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