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arXiv · 1904.08574

Anomalous conduction band fluctuation in silicon carbide metal-oxide-semiconductor structures revealed by electrical characterization of field effect transistors combined with self-consistent numerical calculations

Koji Ito·Takuma Kobayashi·Tsunenobu Kimoto
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Abstract

We determined the interface state density ($D_{\rm it}$) distributions in the vicinity of the conduction band edge in silicon carbide (SiC) metal-oxide-semiconductor (MOS) structures by reproducing the experimental current-voltage characteristics of MOS field effect transistors (MOSFETs) with numerical calculations. In the calculation, potential distributions and energy sub-bands in the inversion layer were calculated by solving Poisson and Schr\"{o}dinger equations, respectively. We demonstrate that gate characteristics of the MOSFETs are well described by considering that the interface states are caused by fluctuation of free-electron density of states in a two-dimensional system. The $D_{\rm it}$ distributions are almost uniquely determined by the oxide formation process (as oxidation or interface nitridation) and independent of the acceptor concentration ($3\times10^{15}-1\times10^{18}\ {\rm cm^{-3}}$).

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Koji Ito, Takuma Kobayashi, Tsunenobu Kimoto. 2019-04-18. Anomalous conduction band fluctuation in silicon carbide metal-oxide-semiconductor structures revealed by electrical characterization of field effect transistors combined with self-consistent numerical calculations. https://doi.org/10.1063/5.0013240

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