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arXiv · 1904.10123

Origin of the butterfly magnetoresistance in a Dirac nodal-line system

Y. -C. Chiu·K. -W. Chen·R. Schönemann·V. L. Quito·S. Sur·Q. Zhou·D. Graf·E. Kampert·T. Förster·K. Yang·G. T. McCandless·Julia Y. Chan·R. E. Baumbach·M. D. Johannes·L. Balicas
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Abstract

We report a study on the magnetotransport properties and on the Fermi surfaces (FS) of the ZrSi(Se,Te) semimetals. Density Functional Theory (DFT) calculations, in absence of spin orbit coupling (SOC), reveal that both the Se and the Te compounds display Dirac nodal lines (DNL) close to the Fermi level $\varepsilon_F$ at symmorphic and non-symmorphic positions, respectively. We find that the geometry of their FSs agrees well with DFT predictions. ZrSiSe displays low residual resistivities, pronounced magnetoresistivity, high carrier mobilities, and a butterfly-like angle-dependent magnetoresistivity (AMR), although its DNL is not protected against gap opening. As in Cd$_3$As$_2$, its transport lifetime is found to be 10$^2$ to 10$^3$ times larger than its quantum one. ZrSiTe, which possesses a protected DNL, displays conventional transport properties. Our evaluation indicates that both compounds most likely are topologically trivial. Nearly angle-independent effective masses with strong angle dependent quantum lifetimes lead to the butterfly AMR in ZrSiSe.

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Y. -C. Chiu, K. -W. Chen, R. Schönemann, V. L. Quito, S. Sur, Q. Zhou, D. Graf, E. Kampert, T. Förster, K. Yang, G. T. McCandless, Julia Y. Chan, R. E. Baumbach, M. D. Johannes, L. Balicas. 2019-04-23. Origin of the butterfly magnetoresistance in a Dirac nodal-line system. https://doi.org/10.1103/physrevb.100.125112

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