Josephson Junction Field-effect Transistors for Boolean Logic Cryogenic Applications

Feng Wen; Javad Shabani; Emanuel Tutuc

doi:10.1109/ted.2019.2951634

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arXiv · 1905.13008

Josephson Junction Field-effect Transistors for Boolean Logic Cryogenic Applications

Feng Wen·Javad Shabani·Emanuel Tutuc

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Abstract

Josephson junction field effect transistors (JJ-FET) share design similarities with metal-oxide-semiconductor field effect transistors, except for the source/drain contacts being replaced by superconductors. Similarly, the super current due to proximity effect is tunable by the gate voltage. In this study, we examine the feasibility of JJ-FET-based Boolean logic and memory elements for cryogenic computing, in light of recent advances in novel materials and fabrication techniques. Using a two-dimensional ballistic transport JJ-FET model, we implement circuit level simulations for JJ-FET logic gates, and discuss criteria for realizing signal restoration, as well as fanout. We show that the JJ-FET is a promising candidate for very low power, clocked voltage-level dynamic logic at cryogenic temperatures.

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Feng Wen, Javad Shabani, Emanuel Tutuc. 2019-05-30. Josephson Junction Field-effect Transistors for Boolean Logic Cryogenic Applications. https://doi.org/10.1109/ted.2019.2951634

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