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Javad Shabani

Publications and source records attributed to Javad Shabani.

At least 19 recordsLinked to original sources

Crystalline Germanium Josephson Junctions

Conventional superconducting quantum electronics rely on well-established Josephson junctions made of Al/AlO$_{x}$ where the weak link AlO$_{x}$ is amorphous and is believed to host two-level systems that limit coherence. Crystalline Josephson junctions exhibit atomically ordered interface quality but remain constrained by complex fabrication and intrinsic asymmetry of epitaxial growth. Here, we demonstrate a fully epitaxial approach based on superconductivity in gallium-doped germanium, enabling the realization of Josephson junctions entirely grown in situ by molecular beam epitaxy. These devices feature atomically sharp interfaces and crystalline weak links, resulting in strong Josephson coupling in the ultra-short regime. We observe an unconventional enhancement of the switching current under applied magnetic field, which we attribute to quasiparticle-assisted thermalization processes from the Al contacts. This platform combines structural coherence, fabrication simplicity, and scalability, offering a promising route toward low-disorder, CMOS-compatible superconducting qubits in a merged element transmon architecture.

cond-mat.mes-hall

Observation of Critical Current Minimum in Super-Honeycomb Josephson Junction Arrays

Superconductor-semiconductor Josephson junction arrays are a uniquely tunable platform for studying collective quantum phenomena, particularly in the regime where localized Andreev bound states can hybridize across the lattice when the physical separation between adjacent junctions is smaller than their coherence length ($\xi_{\text{ABS}}>d_{\text{JJ}}$). Here, we investigate three distinct Al-InAs Josephson junction arrays: a square array and super-honeycomb array fabricated within this ${\xi_{\text{ABS}}>d_{\text{JJ}}}$ regime, as well as a larger-spacing super-honeycomb control device designed such that $\xi_{\text{ABS}}\lesssim\!~d_{\text{JJ}}$. Under an out-of-plane field, critical current peaks emerge at rational filling factors, reflecting stable vortex configurations in the lattices. In the super-honeycomb lattice, vortices localize to distinct non-identical plaquettes at different filling factors, as predicted by frustrated XY model simulations. A rotating in-plane field yields periodic critical current oscillations that reflect the Rashba spin-orbit coupling inherent to the InAs quantum well. Surprisingly, at $f = 1$, the closely spaced super-honeycomb array exhibits a distinct critical current minimum as the magnitude of the in-plane field increases, a signature absent in the square array and large-spacing super-honeycomb array. These results indicate that this signature is jointly influenced by the unique geometry of the super-honeycomb vortex lattice and by long-range inter-junction hybridization.

cond-mat.mes-hall

Interplay of superconductivity and ferromagnetism in ferromagnetic semiconductor-based Josephson junctions

The interplay between superconductivity and ferromagnetism has long been pursued as a route to unconventional Josephson effects, yet suitable material platforms remain limited. Here we report Josephson junctions based on epitaxial Al/InAs/(Ga,Fe)Sb heterostructures grown by low-temperature molecular beam epitaxy, achieving atomically abrupt superconductor/semiconductor/ferromagnetic interfaces. The devices exhibit clear proximity-induced superconductivity, including multiple Andreev reflections and gate-tunable supercurrents, confirming transparent coupling across the hybrid structure. Under perpendicular magnetic fields, the junctions reveal highly unconventional Fraunhofer interference patterns with hysteresis, flux jumps, asymmetric lobe evolution, and clear nonreciprocity, providing strong evidence of induced ferromagnetism and broken time-reversal symmetry in the superconducting channel. Gate control further modulates the critical current, highlighting the semiconducting nature of the system. Our results demonstrate that ferromagnetic semiconductor heterostructures can serve as a highly tunable platform for exploring proximity-induced superconductivity and superconducting diode effects, and for advancing device concepts at the intersection of magnetism and quantum electronics.

cond-mat.supr-con

Anharmonicity and Charge-Noise Sensitivity of Fraunhofer Qubit

We present a theory of a flux-tunable superconducting qubit, the "Fraunhofer qubit," based on the Fraunhofer interference in a wide ballistic Josephson junction. As magnetic flux threads the junction, the Josephson potential is effectively averaged over a phase window proportional to flux. For perfectly transmitting junctions, as flux approaches one flux quantum h/2e, the flux averaging transforms the potential near its minimum from a quadratic to a triangular shape, resulting in significantly enhanced anharmonicity. This enhancement persists for junctions with lower transparency conducting channels. Microscopic tight-binding simulations that include inhomogeneous electrostatic potential and disorder confirm the enhancement of anharmonicity. These results establish a framework for flux control in hybrid superconducting circuits, providing an operating point where anharmonicity and charge-noise protection can be optimally balanced.

cond-mat.mes-hall

Resource-Efficient Emulation of Majorana Zero Mode Braiding on a Superconducting Trijunction

Topological superconductivity could host quasiparticles that are key candidates for fault-tolerant quantum computation due to their immunity to noise as they obey non-Abelian exchange statistics. For example, in the case of Majorana Zero Modes (MZM), braiding enables two topologically protected quantum gates. While their direct manipulation in solid-state systems remains experimentally challenging, digital emulation of MZM behavior has provided insight as well as a deeper understanding of controlling these topological quantum systems. This emulation is typically accomplished by mapping the topological and trivial phases of a Majorana system to ferromagnetic and paramagnetic Hamiltonians of a spin-glass model. This approach usually relies on adiabatic evolution of superconducting Hamiltonians, which require circuits with very large depths. In this work, we present a resource-efficient method to emulate MZM braiding in a trijunction geometry using a quantum processor. We introduce direct braiding operators which simulate the evolution more efficiently, reducing the quantum gate overhead. We then further generalize this method to emulate braiding operations in extended trijunction architectures based on Kitaev chains.

quant-ph

High-rate Scalable Entanglement Swapping Between Remote Entanglement Sources on Deployed New York City Fibers

Entanglement swapping between photon pairs generated at physically separated nodes over telecommunication fiber infrastructure is an essential step towards the quantum internet, enabling applications such as quantum repeaters, blind quantum computing, distributed quantum computing, and distributed quantum sensing. However, successful networked entanglement swapping relies on generating indistinguishable pairs of photons and preserving them over deployed fibers. This has limited most previous demonstrations to laboratory settings or relied on sophisticated methods to maintain the necessary indistinguishability. Here, we demonstrate a scalable entanglement swapping experiment using naturally indistinguishable entanglement sources based on warm atomic vapor cells. Without sharing lasers or optical frequency references between nodes, nor the need for pulsing the sources, we achieve a swapping rate of nearly 500 pairs/s while maintaining the CHSH parameter above 2. Additionally, we demonstrate the scalability of our method by maintaining the quality of the entanglement swapping on 17.6-km of deployed fibers in NYC, relying on commercially available SPADs at the spoke nodes, SNSPDs at the hub and standard time-synchronization techniques. Our work paves the way for the practical deployment of large-scale hub-and-spoke quantum networks within cities and data centers.

quant-ph

Planar Josephson junction devices with narrow superconducting strips: Topological properties and optimization

We study the low-energy physics of planar Josephson junction structures realized in a quasi-two dimensional semiconductor system proximity-coupled to narrow superconducting films. Using both a recursive Green's function approach and an effective Hamiltonian approximation, we investigate the topological superconducting phase predicted to emerge in this type of system. We first characterize the effects associated with varying the electrostatic potentials applied within the unproximitized semiconductor regions. We then address the problem of optimizing the width of the superconductor films and identifying the optimal regimes characterized by large topological gap values. We find that structures with narrow superconducting films of widths ranging between about $100~$nm and $200~$nm can support topological superconducting phases with gaps up to $40\%$ of the parent superconducting gap, significantly larger than those characterizing the corresponding wide-superconductor structures. This work represents the first component of a proposed comprehensive strategy to address this optimization problem in planar Josephson junction structures and realize robust topological devices.

cond-mat.supr-con

Hybrid superinductance with Al/InAs

We report microwave spectroscopy of Josephson junctions chains made from an epitaxial Al/InAs heterostructure. The chains exhibit superinductance, with characteristic wave impedance exceeding $R_{Q} = \hbar/(2e)^{2}$. The planar nature of the junctions results in a large plasma frequency, with no measurable deviations from ideal dispersion up to $12~\mathrm{GHz}$. Internal quality factors decrease sharply with frequency, which we describe with a simple loss model. The possibility of a loss mechanism intrinsic to the superconductor-semiconductor junction is considered.

cond-mat.mes-hall

Novel qubits in hybrid semiconductor-superconductor nanostructures

Hybrid semiconductor-superconductor qubits have recently emerged as a promising alternative to traditional platforms, combining material advantages with device-level tunability. A defining feature is their gate-tunable Josephson coupling, enabling superconducting qubit architectures with full electric-field control and offering a path toward scalable, low-crosstalk quantum processors. This approach seeks to merge benefits of superconducting and semiconductor qubits, for instance by encoding quantum information in the spin of a quasiparticle occupying an Andreev bound state, thus combining long coherence times with fast, flexible control. Progress has accelerated through bottom-up engineering of Andreev states in coupled quantum dot arrays, leading to architectures such as minimal Kitaev chains hosting Majorana zero modes. In parallel, Hamiltonian-protected designs aim to enhance resilience against local noise and decoherence by exploiting superconducting phase dynamics and discrete charge or flux degrees of freedom. This article reviews recent theoretical and experimental advances in hybrid qubits, providing an overview of physical mechanisms, device implementations, and emerging architectures, with emphasis on their potential for (topologically) protected quantum information processing. While many designs remain at proof-of-concept stage, rapid progress suggests practical demonstrations may soon be achievable.

cond-mat.mes-hall

Enhanced superconducting diode effect in hybrid Josephson junctions

The superconducting diode effect (SDE) has recently been observed in various systems, sparking interest in novel superconducting devices and offering a new platform to probe intrinsic material properties. Josephson junctions with strong Rashba spin-orbit coupling have exhibited nonreciprocal critical currents under applied magnetic fields. In this work, we investigate the SDE in Josephson junctions incorporating periodic hole arrays patterned into the superconducting leads on InAs heterostructures with epitaxial aluminum. We observe an enhanced diode effect when a top gate depletes the 2DEG in the region of the hole arrays, while preserving the overall supercurrent. Theoretical analysis shows that the physics behind this phenomenon is the increased difference of transparency between different bands in the junction. These results highlight a new pathway for engineering and controlling nonreciprocal superconducting transport in hybrid systems.

cond-mat.mes-hall

Strongly anharmonic flux-tunable transmon based on InAs-Al 2D heterostructure

The gatemon qubits, made of transparent superconducting-semiconducting Josephson junctions, typically have even weaker anharmonicity than the opaque AlOx-junction transmons. However, flux-frustrated gatemons can acquire a much stronger anharmonicity, originating from the interference of the higher-order harmonics of the supercurrent. Here we investigate this effect of enhanced anharmonicity in split-junction gatemon devices based on InAs-Al 2D heterostructure. We find that anharmonicity in excess of 100% can be routinely achieved at the half-integer flux sweet-spot without any need for electrical gating or excessive sensitivity to the offset charge noise. We verified that such intrinsically large anharmonicity enables our devices to be driven coherently with raw Rabi frequencies exceeding 100 MHz, without any pulse shaping, simplifying implementation and control compared to traditional gatemons and transmons. Furthermore, by analyzing a relatively high-resolution spectroscopy of the device transitions as a function of flux, we were able to extract fine details of the current-phase relation, to which transport measurements would hardly be sensitive. The strong anharmonicity of our anharmonic tunable transmons, along with their bare-bones design, can prove to be a precious resource that transparent superconducting-semiconducting junctions bring to quantum information processing.

cond-mat.mes-hall

Superconductivity in Substitutional Ga-Hyperdoped Ge Epitaxial Thin Films

Doping-induced superconductivity in group IV elements may enable quantum functionalities in material systems accessible with well-established semiconductor technologies. Non-equilibrium hyperdoping of group III atoms into C, Si, or Ge can yield superconductivity; however, its origin is obscured by structural disorder and dopant clustering. Here, we report the epitaxial growth of hyperdoped Ga:Ge films and trilayer heterostructures by molecular beam epitaxy with extreme hole concentrations ($n_\textup{h} = 4.15 \times 10^{21}$~cm$^{-3}$, ~17.9\% Ga substitution) that yield superconductivity with a critical temperature of $T_{\textup{c}} = 3.5$~K and an out-of-plane critical field of 1~T at 270~mK. Synchrotron-based X-ray absorption and scattering methods reveal that Ga dopants are substitutionally incorporated within the Ge lattice, introducing a tetragonal distortion to the crystal unit cell. Our findings, corroborated by first-principles calculations, suggest that the structural order of Ga dopants creates a narrow band for the emergence of superconductivity in Ge, establishing hyperdoped Ga:Ge as a low-disorder, epitaxial superconductor-semiconductor platform.

cond-mat.mes-hall

Directional conductance of Andreev crystals in hybrid Josephson junction arrays

Andreev bound states are coherent electron-hole superpositions that form in a normal metal through repeated Andreev reflection at a superconducting interface. When the length of a superconducting segment is comparable to the coherence length, the bound states on opposite sides of the segment hybridize through quasiparticle tunneling. In a periodic array, these hybridized Andreev bound states form energy bands below the superconducting gap. We develop a theoretical framework for transport in such Andreev crystals. We demonstrate that, at high interface transparency, a constant phase bias between neighboring superconductors renders the bands directional: one band contains only right-moving and the other only left-moving electronic states. This property leads to a directional conductance that enables the device to operate as a flux- and bias-voltage-tunable filter that allows signal transmission in only one direction.

cond-mat.mes-hall

Gate-tunable polarity inversions and three-fold rotation symmetry of the superconducting diode effect

The superconducting diode effect is an asymmetry in the critical current with respect to the supercurrent polarity. One impetus driving recent interest in the effect is its dependence on intrinsic or microscopic symmetry breaking mechanisms. Here, we study the superconducting diode effect in gated planar Josephson junctions fabricated on a superconductor--semiconductor heterostructure under an in-plane magnetic field. We observe two gate-driven inversions of the diode polarity in the vicinity of zero field, as well as a third-harmonic component in the dependence of the diode efficiency on the in-plane field angle. We analyze the Lifshitz invariant for an arbitrary spin--orbit coupling and show that multiple polarity inversions are possible in the presence of both linear and cubic Dresselhaus terms, where the Rashba parameter varies monotonically with gate voltage. Numerical calculations of the diode efficiency further reveal the presence of higher harmonics in its field-angle dependence in the presence of spin--orbit coupling.

cond-mat.mes-hall

Gate tunable enhancement of supercurrent in hybrid planar Josephson junctions

Planar Josephson junctions (JJs) have emerged as a promising platform for the realization of topological superconductivity and Majorana zero modes. To obtain robust quasi one-dimensional (1D) topological superconducting states using planar JJs, limiting the number of 1D Andreev bound states' subbands that can be present, and increasing the size of the topological superconducting gap, are two fundamental challenges. It has been suggested that both problems can be addressed by properly designing the interfaces between the JJ's normal region and the superconducting leads. We fabricated Josephson junctions with periodic hole structures on the superconducting contact leads on InAs heterostructures with epitaxial superconducting Al. By depleting the chemical potential inside the hole region with a top gate, we observed an enhancement of the supercurrent across the junction. Such an enhancement is reproduced in theoretical simulations. The theoretical analysis shows that the enhancement of the JJ's critical current is achieved when the hole depletion is such to optimize the matching of quasiparticles' wave-function at the normal/superconductor interface. These results show how the combination of carefully designed patterns for the Al coverage, and external gates, can be successfully used to tune the density and wave functions' profiles in the normal region of the JJ, and therefore open a new avenue to tune some of the critical properties, such as number of subbands and size of the topological gap, that must be optimized to obtain robust quasi 1D superconducting states supporting Majorana bound states.

cond-mat.mes-hall

Geometric dependence of critical current magnitude and nonreciprocity in planar Josephson junctions

Planar Josephson junctions in a magnetic field exhibit the superconducting diode effect, by which the critical current magnitude depends on the polarity of the transport current. A number of different mechanisms for the effect have been proposed.Here, we study symmetric, T-shaped planar Josephson junctions with semiconducting weak links in an in-plane magnetic field perpendicular to an applied current bias. In particular, we vary the longitudinal width (i.e.\ parallel to the current) of the superconducting contacts and the voltage of an electrostatic gate. We observe an increase in both critical current and diode efficiency with increasing contact width and relate the critical current behavior to the induced coherence length of the Andreev bound states that mediate the supercurrent flow through the junction. We further observe a linear trend, with respect to inverse contact width, of the field at which the diode efficiency is maximized, which saturates as the contact width becomes large compared to the coherence length. The smaller field at which the critical current is maximized additionally exhibits a strong gate dependence. We interpret these observations in the context of multiple underlying mechanisms, including spin--orbit coupling and orbital effects.

cond-mat.mes-hall

Gatemonium: A Voltage-Tunable Fluxonium

We present a new style of fluxonium qubit, gatemonium, based on an all superconductorsemiconductor hybrid platform. The linear inductance is achieved using six hundred planar Al-InAs Josephson junctions (JJs) in series. By tuning the single junction with a gate voltage, we demonstrate electrostatic control of the effective Josephson energy, tuning the weight of the fictitious phase particle. One and two-tone spectroscopy of the gatemonium transitions further reveal details of the hybrid plasmon-fluxon spectrum. Accounting for the nonsinusoidal current-phase relation of the single junction, we fit the measured spectra to extract charging and inductive energies. We conduct time domain characterization of the plasmon modes in a second gatemonium device with different charging energy and JJ array inductance. We discuss future directions for this platform in gate voltage-tunable, high plasma frequency, enhanced impedance junction arrays, and enhanced coherence times for voltage tunable architectures.

cond-mat.mes-hall

Molecular beam epitaxy growth of superconducting tantalum germanide

Developing new material platforms for use in superconductor-semiconductor hybrid structures is desirable due to limitations caused by intrinsic microwave losses present in commonly used III/V material systems. With the recent reports on tantalum superconducting qubits that show improvements over the Nb and Al counterparts, exploring Ta as an alternative superconductor in hybrid material systems is promising. Here, we study the growth of Ta on semiconducting Ge (001) substrates grown via molecular beam epitaxy. We show that at a growth temperature of 400$^{\circ}$C the Ta diffuses into the Ge matrix in a self-limiting nature resulting in smooth and abrupt surfaces and interfaces with roughness on the order of 3-7 Å as measured by atomic force microscopy and x-ray reflectivity. The films are found to be a mixture of Ta$_{5}$Ge$_{3}$ and TaGe$_{2}$ binary alloys and form a native oxide that seems to form a sharp interface with the underlying film. These films are superconducting with a $T_{C}\sim 1.8-2$K and $H_{C}^{\perp} \sim 1.88T$, $H_{C}^{\parallel} \sim 5.1T$. These results show this tantalum germanide film to be promising for future superconducting quantum information platforms.

cond-mat.mes-hall