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arXiv · 1906.04850

Defect-Moderated Oxidative Etching of MoS2

Pierce Maguire·Jakub Jadwiszczak·Maria O'Brien·Darragh Keane·Georg S. Duesberg·Niall McEvoy·Hongzhou Zhang
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Abstract

We report a simple technique for the selective etching of bilayer and monolayer MoS$_2$. In this work, chosen regions of MoS$_2$ were activated for oxygen adsorption and reaction by the application of low doses of He$^+$ at 30 keV in a gas ion microscope. Raman spectroscopy, optical microscopy and scanning electron microscopy were used to characterize both the etched features and the remaining material. It has been found that by using a pre-treatment to introduce defects, MoS$_2$ can be etched very efficiently and with high region specificity by heating in air.

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Pierce Maguire, Jakub Jadwiszczak, Maria O'Brien, Darragh Keane, Georg S. Duesberg, Niall McEvoy, Hongzhou Zhang. 2019-06-11. Defect-Moderated Oxidative Etching of MoS2. https://doi.org/10.1063/1.5115036

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