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Hongzhou Zhang

Publications and source records attributed to Hongzhou Zhang.

13 recordsLinked to original sources

Demystifying the Design Space and Best Practices for Heterogeneous LLM Inference and Serving

Heterogeneous prefill-decode (PD) inference is now in production: prefill on cost-efficient or supply-available accelerators, decode on bandwidth-strong ones, and KV state crossing mixed interconnects in mixed numerical formats. Each deployment makes these decisions on its own. What is missing is the picture across configurations-which decisions must be made jointly at the PD boundary, and which can be made independently. We propose a design space organized along four design axes-accelerator, precision, interconnect, and KV residency and the workload regime (stage pressure) they respond to. We show that only a subset of interactions among these factors become binding constraints once PD inference becomes heterogeneous. These interactions surface through three recurring boundary decisions: compute placement, KV representation, and KV ownership. The resulting analysis yields concrete guidance. Precision policy belongs to runtime roles rather than to a single system-wide setting, because the same low-bit format relieves different bottlenecks on each side of the boundary. KV transfer engines move bytes rather than tensor semantics, making representation compatibility an explicit boundary concern whenever producer and consumer differ. The KV handoff also carries a lifecycle-reservation, release, and failure recovery-that spans prefill and decode and requires explicit ownership. Two further interactions remain open. Cross-vendor and interconnect-related claims are stated as design guidance grounded in industrial deployment observations and source-code inspection of the runtimes involved.

cs.DC

An Efficient, Reliable and Observable Collective Communication Library in Large-scale GPU Training Clusters

Large-scale LLM training requires collective communication libraries to exchange data among distributed GPUs. As a company dedicated to building and operating large-scale GPU training clusters, we encounter several practical limitations of NCCL in production, including 1) SM competition between computation and communication, 2) expensive restart costs under link failures, and 3) insufficient observability of transient collective communication anomalies. To address these challenges, we propose VCCL, an efficient, reliable, and observable collective communication library in large-scale GPU training clusters. VCCL removes SM-consuming P2P kernels by moving intra-node data movement and stream dependency enforcement to CPU threads and GPU copy engines. VCCL also introduces a primary-backup QP mechanism to tolerate frequent NIC port failures, and designs a window-based monitor to observe network anomalies at O({\mu}s) level. We opensource VCCL and deploy it in production training clusters for several months. Compared with NCCL, VCCL improves training throughput by up to 5.28% and reduces massive GPU resource wastage through runtime fault tolerance and finegrained monitor. We also share experience and lessons we learned during the deployment of VCCL in large-scale clusters.

cs.DC

Enhanced chemical vapour deposition of monolayer MoS2 films via a clean promoter

Two-dimensional (2D) transition metal dichalcogenides (TMDCs), exemplified by molybdenum disulfide (MoS2), have shown exceptional potential for data-centred, energy-efficient electronic applications due to their unique electrical, optoelectronic, and mechanical properties. However, challenges such as the controllable synthesis of high-quality, large-area 2D MoS2 films and the mitigation of contamination during growth remain significant barriers to their integration into advanced technologies. Here, we developed a novel contamination-free growth promoter, enabling the clean and scalable synthesis of high quality 2D MoS2 with desirable grain structures via chemical vapour deposition (CVD). By optimising the reactant concentration and S/Mo ratio, we achieved promoter-dominated enhanced growth with enhanced quality, as evidenced by the increased MoS2 flake size and coverage, alongside a strong PL A exciton peak at 1.84 eV, matching that of the mechanically exfoliated sample. This approach facilitates the clean and site-specific growth of high-quality 2D MoS2, establishing a robust pathway for the practical implementation of 2D MoS2 in next-generation electronic devices.

cond-mat.mtrl-sci

Understanding Substrate Effects on Two-Dimensional MoS2 Growth: a Kinetic Monte Carlo Approach

Controlling the morphology of two-dimensional (2D) transition metal dichalcogenides (TMDs) plays a key role in their applications. Although chemical vapor deposition can achieve wafer-scale growth of 2D TMDs, a comprehensive theoretical framework for effective growth optimization is lacking. Atomistic modeling methods offer a promising approach to delve into the intricate dynamics underlying the growth. In this study, we employ kinetic Monte Carlo (kMC) simulations to identify crucial parameters that govern the morphology of MoS2 flakes grown on diverse substrates. Our simulations reveal that large adsorption rates significantly enhance growth speed, which however necessitates rapid edge migration to achieve compact triangles. Substrate etching can tune the adsorption-desorption process of adatoms and enable preferential growth within a specific substrate region, controlling the flake morphology. This study unravels the complex dynamics governing 2D TMD morphology, offering a theoretical framework for decision-making in the design and optimization of TMD synthesis processes.

cond-mat.mtrl-sci

On the switching mechanism and optimisation of ion irradiation enabled 2D $MoS_2$ memristors

Memristors are prominent passive circuit elements with promising futures for energy-efficient in-memory processing and revolutionary neuromorphic computation. State-of-the-art memristors based on two-dimensional (2D) materials exhibit enhanced tunability, scalability and electrical reliability. However, the fundamental of the switching is yet to be clarified before they can meet industrial standards in terms of endurance, variability, resistance ratio, and scalability. This new physical simulator based on the kinetic Monte Carlo (kMC) algorithm reproduces the defect migration process in 2D materials and sheds light on the operation of 2D memristors. The present work employs the simulator to study a two-dimensional $2H-MoS_2$ planar resistive switching (RS) device with an asymmetric defect concentration introduced by ion irradiation. The simulations unveil the non-filamentary RS process and propose practical routes to optimize the device's performance. For instance, the resistance ratio can be increased by 53% by controlling the concentration and distribution of defects, while the variability can be reduced by 55% by increasing 5-fold the device size from 10 to 50 nm. Our simulator also explains the trade-offs between the resistance ratio and variability, resistance ratio and scalability, and variability and scalability. Overall, the simulator may enable an understanding and optimization of devices to expedite cutting-edge applications.

physics.comp-ph

XeF$_2$-Enhanced Focused Ion Beam Etching and Passivation of GaSb

Focused ion beams (FIBs) are widely used to modify optoelectronic devices, but their utility is severely restricted in some III-V materials due to adverse effects such as nanofibre growth and contamination. This study describes an effective machining method for the modification and passivation of GaSb using a focused Ga$^+$ beam with the addition of XeF$_2$ gas. The added gas suppressed the nanofibre growth and allowed for controlled etching. Moreover, the milled surface exhibited much lower roughness and contained much lower levels of carbon and oxygen contaminants. These effects are attributed to the formation of a gallium fluoride layer, which inhibits the catalytic vapour-liquid-solid (VLS) nanofibre growth. The fluoride layer prevents the surface oxidation, acting as an effective passivation layer. This gas-assisted FIB process eliminates the idiosyncratic challenges of modifying GaSb with an ion beam and it can be implemented cost-effectively and rapidly in conventional FIB systems---allowing for site-specific modification of bespoke GaSb-based devices.

physics.app-ph

Defect-Moderated Oxidative Etching of MoS2

We report a simple technique for the selective etching of bilayer and monolayer MoS$_2$. In this work, chosen regions of MoS$_2$ were activated for oxygen adsorption and reaction by the application of low doses of He$^+$ at 30 keV in a gas ion microscope. Raman spectroscopy, optical microscopy and scanning electron microscopy were used to characterize both the etched features and the remaining material. It has been found that by using a pre-treatment to introduce defects, MoS$_2$ can be etched very efficiently and with high region specificity by heating in air.

cond-mat.mtrl-sci

Photoresponsivity enhancement in monolayer MoS$_2$ by rapid O$_2$:Ar plasma treatment

We report up to ten-fold enhancement of the photoresponsivity of monolayer MoS$_2$ by treatment with O$_2$:Ar (1:3) plasma. We characterize the surface of plasma-exposed MoS$_2$ by TEM, Raman and PL mapping and discuss the role of MoO$_x$ in improving the photocurrent generation in our devices. At the highest tested laser power of 0.1 mW, we find ten-fold enhancements to both the output current and carrier field-effect mobility under the illumination wavelength of 488 nm. We suggest that the improvement of electrical performance is due to the surface presence of MoO$_x$ resulting from the chemical conversion of MoS$_2$ by the oxygen-containing plasma. Our results highlight the beneficial role of plasma treatment as a fast and convenient way of improving the properties of synthetic 2D MoS$_2$ devices for future consideration in optoelectronics research.

physics.app-ph

Suppression of the Shear Raman Mode in Defective Bilayer MoS2

We investigate the effects of lattice disorders on the low frequency Raman spectra of bilayer MoS2. The bilayer MoS2 was subjected to defect engineering by irradiation with a 30 keV He+ ion beam and the induced morphology change was characterized by transmission electron microscopy. With increasing ion dose the shear mode is observed to redshift and it is also suppressed sharply compared to other Raman peaks. We use the linear chain model to describe the changes to the Raman spectra. Our observations suggest that crystallite size and orientation are the dominant factors behind the changes to the Raman spectra.

cond-mat.mtrl-sci

Neuromorphic MoS2 memtransistors fabricated by localised helium ion beam irradiation

Two-dimensional layered semiconductors have recently emerged as attractive building blocks for next-generation low-power non-volatile memories. However, challenges remain in the controllable sub-micron fabrication of bipolar resistively switching circuit components from these novel materials. Here we report on the scalable experimental realisation of lateral on-dielectric memtransistors from monolayer single-crystal molybdenum disulfide (MoS2) utilising a focused helium ion beam. Site-specific irradiation with the probe of a helium ion microscope (HIM) allows for the creation of charged defects in the MoS2 lattice. The reversible drift of these locally seeded defects in the applied electric field modulates the resistance of the semiconducting channel, enabling versatile memristive functionality on the nanoscale. We find the device can reliably retain its resistance ratios and set biases for hundreds of switching cycles at sweep frequencies of up to 2.9 V/s with relatively low drain-source biases. We also demonstrate long-term potentiation and depression with sharp habituation that promises application in future neuromorphic architectures. This work advances the down-scaling progress of memristive devices without sacrificing key performance parameters such as power consumption or its applicability for synaptic emulation.

cond-mat.mtrl-sci

Defect Sizing, Separation and Substrate Effects in Ion-Irradiated Monolayer 2D Materials

Precise and scalable defect engineering of 2D nanomaterials is acutely sought-after in contemporary materials science. Here we present defect engineering in monolayer graphene and molybdenum disulfide (MoS$_2$) by irradiation with noble gas ions at 30 keV. Two ion species of different masses were used in a gas field ion source microscope: helium (He$^+$) and neon (Ne$^+$). A detailed study of the introduced defect sizes and resulting inter-defect distance with escalating ion dose was performed using Raman spectroscopy. Expanding on existing models, we found that the average defect size is considerably smaller for supported than freestanding graphene and that the rate of defect production is larger. We conclude that secondary atoms from the substrate play a significant role in defect production, creating smaller defects relative to those created by the primary ion beam. Furthermore, a similar model was also applied to supported MoS$_2$, another promising member of the 2D material family. Defect yields for both ions were obtained for MoS$_2$, demonstrating their different interaction with the material and facilitating comparison with other irradiation conditions in the literature.

cond-mat.mtrl-sci

Oxide-mediated self-limiting recovery of field effect mobility in plasma-treated MoS$_2$

Precise tunability of electronic properties of 2D nanomaterials is a key goal of current research in this field of materials science. Chemical modification of layered transition metal dichalcogenides leads to the creation of heterostructures of low-dimensional variants of these materials. In particular, the effect of oxygen-containing plasma treatment on molybdenum disulfide (MoS$_2$) has long been thought to be detrimental to the electrical performance of the material. Here we show that the mobility and conductivity of MoS$_2$ can be precisely controlled and improved by systematic exposure to oxygen:argon plasma, and characterise the material utilising advanced spectroscopy and microscopy. Through complementary theoretical modelling which confirms conductivity enhancement, we uncover the role of a two-dimensional phase of molybdenum trioxide (2D-MoO$_3$) in improving the electronic behaviour of the material. Deduction of the beneficial role of MoO$_3$ will serve to open the field to new approaches with regard to the tunability of 2D semiconductors by their low-dimensional oxides in nano-modified heterostructures.

cond-mat.mtrl-sci

Programmable graphene doping via electron beam irradiation

Graphene is a promising candidate to succeed silicon based devices and doping holds the key to graphene electronics. Conventional doping methods through surface functionalization or lattice modification are effective in tuning carrier densities. These processes, however, lead to degradation of device performance because of structural defect creation. A challenge remains to controllably dope graphene while preserving its superlative properties. Here we show a novel method for tunable and erasable doping of on-chip graphene, realized by using a focused electron beam. Our results demonstrate site-specific control of carrier type and concentration achievable by modulating the charge distribution in the dielectric substrate. Thereby, the structural integrity and electrical performance of graphene are preserved, and the doping states are rewritable. Different logic operations were thus implemented in a single graphene sheet. By extending this method to other two-dimensional materials, this work lays out a blueprint for powerful yet simple means of incorporating two-dimensional materials into prospective electronic technologies.

cond-mat.mes-hall