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arXiv · 1906.05245

Record-High Proximity-Induced Anomalous Hall Effect in (Bi$_x$Sb$_{1-x}$)2Te$_3$ Thin Film Grown on CrGeTe$_3$ Substrate

Xiong Yao·Bin Gao·Myung-Geun Han·Deepti Jain·Jisoo Moon·Jae Wook Kim·Yimei Zhu·Sang-Wook Cheong·Seongshik Oh
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Abstract

Quantum anomalous Hall effect(QAHE) can only be realized at extremely low temperatures in magnetically doped topological insulators(TIs) due to limitations inherent with the doping precess. In an effort to boost the quantization temperature of QAHE, magnetic proximity effect in magnetic insulator/TI heterostructures has been extensively investigated. However, the observed anomalous Hall resistance has never been more than several Ohms, presumably owing to the interfacial disorders caused by the structural and chemical mismatch. Here, we show that, by growing (BixSb1-x)2Te3(BST) thin films on structurally and chemically well-matched, ferromagnetic-insulating CeGeTe3(CGT) substrates, the proximity-induced anomalous Hall resistance can be enhanced by more than an order of magnitude. This sheds light on the importance of structural and chemical match for magnetic insulator/TI proximity systems.

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Xiong Yao, Bin Gao, Myung-Geun Han, Deepti Jain, Jisoo Moon, Jae Wook Kim, Yimei Zhu, Sang-Wook Cheong, Seongshik Oh. 2019-06-12. Record-High Proximity-Induced Anomalous Hall Effect in (Bi$_x$Sb$_{1-x}$)2Te$_3$ Thin Film Grown on CrGeTe$_3$ Substrate. https://doi.org/10.1021/acs.nanolett.9b01495

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