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arXiv · 1907.05107

Percolation description of charge transport in amorphous oxide semiconductors

A. V. Nenashev·J. O. Oelerich·S. H. M. Greiner·A. V. Dvurechenskii·F. Gebhard·S. D. Baranovskii
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Abstract

The charge transport mechanism in amorphous oxide semiconductors (AOS) is a matter of controversial debates. Most theoretical studies so far neglected the percolation nature of the phenomenon. In this article, a recipe for theoretical description of charge transport in AOSs is formulated using the percolation arguments. Comparison with the previous theoretical studies shows a superiority of the percolation approach. The results of the percolation theory are compared to experimental data obtained in various InGaZnO materials revealing parameters of the disorder potential in such AOS.

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A. V. Nenashev, J. O. Oelerich, S. H. M. Greiner, A. V. Dvurechenskii, F. Gebhard, S. D. Baranovskii. 2019-07-11. Percolation description of charge transport in amorphous oxide semiconductors. https://doi.org/10.1103/physrevb.100.125202

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