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arXiv · 1907.09017

Pressure-Driven Valence Increase and Metallization in Kondo Insulator Ce$_3$Bi$_4$Pt$_3$

Daniel J. Campbell·Zachary E. Brubaker·Connor Roncaioli·Prathum Saraf·Yuming Xiao·Paul Chow·Curtis Kenney-Benson·Dmitry Popov·Rena J. Zieve·Jason R. Jeffries·Johnpierre Paglione
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Abstract

We report the results of high pressure x-ray diffraction, x-ray absorption, and electrical transport measurements of Kondo insulator Ce$_3$Bi$_4$Pt$_3$ up to 42 GPa, the highest pressure reached in the study of any Ce-based KI. We observe a smooth decrease in volume and movement toward intermediate Ce valence with pressure, both of which point to increased electron correlations. Despite this, temperature-dependent resistance data show the suppression of the interaction-driven ambient pressure insulating ground state. We also discuss potential ramifications of these results for the predicted topological KI state.

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Daniel J. Campbell, Zachary E. Brubaker, Connor Roncaioli, Prathum Saraf, Yuming Xiao, Paul Chow, Curtis Kenney-Benson, Dmitry Popov, Rena J. Zieve, Jason R. Jeffries, Johnpierre Paglione. 2019-10-08. Pressure-Driven Valence Increase and Metallization in Kondo Insulator Ce$_3$Bi$_4$Pt$_3$. https://doi.org/10.1103/physrevb.100.235133

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