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arXiv · 1908.05545

Observation of Highly Nonlinear Resistive Switching of Al2O3/TiO2-x Memristors at Cryogenic Temperature (1.5 K)

Yann Beilliard·François Paquette·Frédéric Brousseau·Serge Ecoffey·Fabien Alibart·Dominique Drouin
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Abstract

In this work, we investigate the behavior of Al2O3/TiO2-x cross-point memristors in cryogenic environment. We report successful resistive switching of memristor devices from 300 K down to 1.5 K. The I-V curves exhibit negative differential resistance effects between 130 and 1.5 K, attributed to a metal-insulator transition (MIT) of the Ti4O7 conductive filament. The resulting highly nonlinear behavior is associated to a maximum ION/IOFF ratio of 84 at 1.5 K, paving the way to selector-free cryogenic passive crossbars. Finally, temperature-dependant thermal activation energies related to the conductance at low bias (20 mV) are extracted for memristors in low resistance state, suggesting hopping-type conduction mechanisms.

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Yann Beilliard, François Paquette, Frédéric Brousseau, Serge Ecoffey, Fabien Alibart, Dominique Drouin. 2019-09-10. Observation of Highly Nonlinear Resistive Switching of Al2O3/TiO2-x Memristors at Cryogenic Temperature (1.5 K). https://doi.org/10.1063/1.5140994

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