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arXiv · 1909.10613

Nanosecond Reversal of Three-Terminal Spin Hall Effect Memories Sustained at Cryogenic Temperatures

Graham E. Rowlands·Minh-Hai Nguyen·Sriharsha V. Aradhya·Shengjie Shi·Colm A. Ryan·Robert A. Buhrman·Thomas A. Ohki
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Abstract

We characterize the nanosecond pulse switching performance of the three-terminal magnetic tunnel junctions (MTJs), driven by the spin Hall effect (SHE) in the channel, at a cryogenic temperature of 3 K. The SHE-MTJ devices exhibit reasonable magnetic switching and reliable current switching by as short pulses as 1 ns of $<10^{12}$ A/m$^{2}$ magnitude, exceeding the expectation from conventional macrospin model. The pulse switching bit error rates reach below $10^{-6}$ for < 10 ns pulses. Similar performance is achieved with exponentially decaying pulses expected to be delivered to the SHE-MTJ device by a nanocryotron device in parallel configuration of a realistic memory cell structure. These results suggest the viability of the SHE-MTJ structure as a cryogenic memory element for exascale superconducting computing systems.

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Graham E. Rowlands, Minh-Hai Nguyen, Sriharsha V. Aradhya, Shengjie Shi, Colm A. Ryan, Robert A. Buhrman, Thomas A. Ohki. 2019-09-23. Nanosecond Reversal of Three-Terminal Spin Hall Effect Memories Sustained at Cryogenic Temperatures. https://doi.org/10.1103/physrevapplied.15.l021004

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