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Minh-Hai Nguyen

Publications and source records attributed to Minh-Hai Nguyen.

14 recordsLinked to original sources

A Morse-Bott Framework for Blind Inverse Problems: Local Recovery Guarantees and the Failure of the MAP

Maximum A Posteriori (MAP) estimation is a cornerstone framework for blind inverse problems, where an image and a forward operator are jointly estimated as the maximizers of a posterior distribution. In applications such as blind deblurring, this principle is used to recover sharp images from degraded observations. In this paper, we analyze the recovery guarantees of MAP-based methods by adopting a \emph{Morse--Bott framework}. We model the image potential as a Morse--Bott function, where natural images are modeled as residing locally on a critical submanifold. This means that while the potential is locally flat along the ``natural'' directions of the image manifold, it is strictly convex in the directions normal to it. We demonstrate that this Morse--Bott hypothesis aligns with the structural properties of state-of-the-art learned priors, a finding we validate through an experimental analysis of the potential landscape and its Hessian spectrum. Our theoretical results show that, in a neighborhood of the ground-truth image and operator, the posterior admits local minimizers that are stable both with respect to initialization (gradient descents converge to the same minimizer) and to small perturbations of the data (solutions vary smoothly with the observations). This local stability potentially provides a theoretical justification for the empirical success of well designed gradient-based optimization in these settings. However, we also demonstrate that this local stability is a \textbf{local} property: the ``blurry trap'', well-known for sparse priors in blind deconvolution, persists even with state-of-the-art learned priors. Our findings demonstrate that the failure of MAP in blind deconvolution is not a limitation of prior quality, but an intrinsic characteristic of the landscape. We conclude that successful recovery depends on strategic initialization around favorable local minima.

cs.CV

DeepInverse: A Python package for solving imaging inverse problems with deep learning

DeepInverse is an open-source PyTorch-based library for solving imaging inverse problems. The library covers all crucial steps in image reconstruction from the efficient implementation of forward operators (e.g., optics, MRI, tomography), to the definition and resolution of variational problems and the design and training of advanced neural network architectures. In this paper, we describe the main functionality of the library and discuss the main design choices.

eess.IV

Symmetry-Aware Reservoir Computing

We demonstrate that matching the symmetry properties of a reservoir computer (RC) to the data being processed dramatically increases its processing power. We apply our method to the parity task, a challenging benchmark problem that highlights inversion and permutation symmetries, and to a chaotic system inference task that presents an inversion symmetry rule. For the parity task, our symmetry-aware RC obtains zero error using an exponentially reduced neural network and training data, greatly speeding up the time to result and outperforming hand crafted artificial neural networks. When both symmetries are respected, we find that the network size $N$ necessary to obtain zero error for 50 different RC instances scales linearly with the parity-order $n$. Moreover, some symmetry-aware RC instances perform a zero error classification with only $N=1$ for $n\leq7$. Furthermore, we show that a symmetry-aware RC only needs a training data set with size on the order of $(n+n/2)$ to obtain such performance, an exponential reduction in comparison to a regular RC which requires a training data set with size on the order of $n2^n$ to contain all $2^n$ possible $n-$bit-long sequences. For the inference task, we show that a symmetry-aware RC presents a normalized root-mean-square error three orders-of-magnitude smaller than regular RCs. For both tasks, our RC approach respects the symmetries by adjusting only the input and the output layers, and not by problem-based modifications to the neural network. We anticipate that generalizations of our procedure can be applied in information processing for problems with known symmetries.

cs.NE

Spin-orbit torque characterization in a nutshell

Spin current and spin torque generation through the spin-orbit interactions in solids, of bulk or interfacial origin, is at the heart of spintronics research. The realization of spin-orbit torque (SOT) driven magnetic dynamics and switching in diverse magnetic heterostructures also pave the way for developing SOT magnetoresistive random access memory and other novel SOT memory and logic devices. Of scientific and technological importance are accurate and efficient SOT quantification techniques, which have been abundantly developed in the last decade. In this article, we summarize popular techniques to experimentally quantify SOTs in magnetic heterostructures at micro- and nano-scale. For each technique, we give an overview of its principle, variations, strengths, shortcomings, error sources, and any cautions in usage. Finally, we discuss the remaining challenges in understanding and quantifying the SOTs in heterostructures.

cond-mat.mes-hall

Reservoir Computing with Superconducting Electronics

The rapidity and low power consumption of superconducting electronics makes them an ideal substrate for physical reservoir computing, which commandeers the computational power inherent to the evolution of a dynamical system for the purposes of performing machine learning tasks. We focus on a subset of superconducting circuits that exhibit soliton-like dynamics in simple transmission line geometries. With numerical simulations we demonstrate the effectiveness of these circuits in performing higher-order parity calculations and channel equalization at rates approaching 100 Gb/s. The availability of a proven superconducting logic scheme considerably simplifies the path to a fully integrated reservoir computing platform and makes superconducting reservoirs an enticing substrate for high rate signal processing applications.

cond-mat.supr-con

Nanosecond Reversal of Three-Terminal Spin Hall Effect Memories Sustained at Cryogenic Temperatures

We characterize the nanosecond pulse switching performance of the three-terminal magnetic tunnel junctions (MTJs), driven by the spin Hall effect (SHE) in the channel, at a cryogenic temperature of 3 K. The SHE-MTJ devices exhibit reasonable magnetic switching and reliable current switching by as short pulses as 1 ns of $<10^{12}$ A/m$^{2}$ magnitude, exceeding the expectation from conventional macrospin model. The pulse switching bit error rates reach below $10^{-6}$ for < 10 ns pulses. Similar performance is achieved with exponentially decaying pulses expected to be delivered to the SHE-MTJ device by a nanocryotron device in parallel configuration of a realistic memory cell structure. These results suggest the viability of the SHE-MTJ structure as a cryogenic memory element for exascale superconducting computing systems.

physics.app-ph

Cryogenic Memory Architecture Integrating Spin Hall Effect based Magnetic Memory and Superconductive Cryotron Devices

One of the most challenging obstacles to realizing exascale computing is minimizing the energy consumption of L2 cache, main memory, and interconnects to that memory. For promising cryogenic computing schemes utilizing Josephson junction superconducting logic, this obstacle is exacerbated by the cryogenic system requirements that expose the technology's lack of high-density, high-speed and power-efficient memory. Here we demonstrate an array of cryogenic memory cells consisting of a non-volatile three-terminal magnetic tunnel junction element driven by the spin Hall effect, combined with a superconducting heater-cryotron bit-select element. The write energy of these memory elements is roughly 8 pJ with a bit-select element, designed to achieve a minimum overhead power consumption of about 30%. Individual magnetic memory cells measured at 4 K show reliable switching with write error rates below $10^{-6}$, and a 4x4 array can be fully addressed with bit select error rates of $10^{-6}$. This demonstration is a first step towards a full cryogenic memory architecture targeting energy and performance specifications appropriate for applications in superconducting high performance and quantum computing control systems, which require significant memory resources operating at 4 K.

physics.app-ph

Sub-nanosecond switching in a cryogenic spin-torque spin-valve memory element with a dilute permalloy free layer

We present a study of the pulsed current switching characteristics of spin-valve nanopillars with in-plane magnetized dilute permalloy and undiluted permalloy free layers in the ballistic regime at low temperature. The dilute permalloy free layer device switches much faster: the characteristic switching time for a permalloy free (Ni0.83Fe0.17) layer device is 1.18 ns, while that for a dilute permalloy ([Ni0.83Fe0.17]0.6Cu0.4) free layer device is 0.475 ns. A ballistic macrospin model can capture the data trends with a reduced spin torque asymmetry parameter, reduced spin polarization and increased Gilbert damping for the dilute permalloy free layer relative to the permalloy devices. Our study demonstrates that reducing the magnetization of the free layer increases the switching speed while greatly reducing the switching energy and shows a promising route toward even lower power magnetic memory devices compatible with superconducting electronics.

physics.app-ph

Efficient Switching of 3-Terminal Magnetic Tunnel Junctions by the Giant Spin Hall Effect of $\rm{Pt}_{85}\rm{Hf}_{15}$ Alloy

Recent research has indicated that introducing impurities that increase the resistivity of Pt can enhance the efficiency of the spin Hall torque it generates. Here we directly demonstrate the usefulness of this strategy by fabricating prototype 3-terminal in-plane-magnetized magnetic tunnel junctions that utilize the spin Hall torque from a $\rm{Pt}_{85}\rm{Hf}_{15}$ alloy, and measuring the critical currents for switching. We find that $\rm{Pt}_{85}\rm{Hf}_{15}$ reduces the switching current densities compared to pure Pt by approximately a factor of 2 for both quasi-static ramped current biases and nanosecond-scale current pulses, thereby proving the feasibility of this approach to assist in the development of efficient embedded magnetic memory technologies.

cond-mat.mtrl-sci

Spin torque study of the spin Hall conductivity and spin diffusion length in platinum thin films with varying resistivity

We report measurements of the spin torque efficiencies in perpendicularly-magnetized Pt/Co bilayers where the Pt resistivity $ρ_{Pt}$ is strongly dependent on thickness $t_{Pt}$ . The damping-like spin Hall torque efficiency per unit current density, $ξ^j_{DL}$ , varies significantly with $t_{Pt}$, exhibiting a peak value $ξ^j_{DL}=0.12$ at $t_{Pt} = 2.8 - 3.9$ nm. In contrast, $ξ^j_{DL}/ρ_{Pt}$ increases monotonically with $t_{Pt}$ and saturates for $t_{Pt} > 5$ nm, consistent with an intrinsic spin Hall effect mechanism, in which $ξ^j_{DL}$ is enhanced by an increase in $ρ_{Pt}$ . Assuming the Elliott-Yafet spin scattering mechanism dominates we estimate that the spin diffusion length $λ_s = (0.77 \pm 0.08) \times 10^{-15} Ωm^2 /ρ_{Pt}$.

cond-mat.mes-hall

Enhancement of the Anti-Damping Spin Torque Efficacy of Platinum by Interface Modification

We report a strong enhancement of the efficacy of the spin Hall effect (SHE) of Pt for exerting anti-damping spin torque on an adjacent ferromagnetic layer by the insertion of $\approx$ 0.5 nm layer of Hf between a Pt film and a thin, < 2 nm, Fe$_{60}$Co$_{20}$B$_{20}$ ferromagnetic layer. This enhancement is quantified by measurement of the switching current density when the ferromagnetic layer is the free electrode in a magnetic tunnel junction. The results are explained as the suppression of spin pumping through a substantial decrease in the effective spin-mixing conductance of the interface, but without a concomitant reduction of the ferromagnet\' s absorption of the SHE generated spin current.

cond-mat.mtrl-sci

Enhancement of Perpendicular Magnetic Anisotropy and Transmission of Spin-Hall-Effect-Induced Spin Currents by a Hf Spacer Layer in W/Hf/CoFeB/MgO Layer

We report that strong perpendicular magnetic anisotropy of the ferromagnetic layer in a W/CoFeB/MgO multilayer structure can be established by inserting a Hf layer as thin as 0.25 nm between the W and CoFeB layers. The Hf spacer also allows transmission of spin currents generated by an in-plane charge current in the W layer to apply strong spin torque on the CoFeB, thereby enabling current-driven magnetic switching. The antidamping-like and field-like components of the spin torque exerted on a 1 nm CoFeB layer are of comparable magnitudes in this geometry. Both components originate from the spin Hall effect in the underlying W layer.

cond-mat.mtrl-sci

Phase Transition to Insulating State from Quantum Hall State by Current-Induced Nuclear Spin Polarization

We investigate the resistance enhancement state (RES) where the magnetoresistance of the $ν= 2/3$ fractional quantum Hall state (FQHS) is increased with dynamic nuclear spin polarization (DNP) induced by a large electric current. After inducing DNP, we measure the temperature dependence of the magnetoresistance by a small current over a short period of time. We find that the FQHS makes a phase transition to an insulating state. By measuring the Hall resistance in the insulating state, we find that the RES exhibits a quantized Hall resistance. We discuss the RES in association with the Anderson localization.

cond-mat.mes-hall

Interlayer Diffusion of Nuclear Spin Polarization in $ν=2/3$ Quantum Hall States

At the spin transition point of $ν=2/3$ quantum Hall states, nuclear spins in a two-dimensional electron gas are polarized by an electric current. Using GaAs/AlGaAs double-quantum-well samples, we first observed the spatial diffusion of nuclear spin polarization between the two layers when the nuclear spin polarization is current-induced in one layer. By numerical simulation, we estimated the diffusion constant of the nuclear spin polarization to be $15 \pm 7$\,nm$^2$/s.

cond-mat.mes-hall