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arXiv · 1910.11210

GaSbBi alloys and heterostructures: fabrication and properties

O. Delorme·L. Cerutti·R. Kudrawiec·Esperanza Luna·J. Kopaczek·M. Gladysiewicz·A. Trampert·E. Tournié·J. -B. Rodriguez
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Abstract

Dilute bismuth (Bi) III-V alloys have recently attracted great attention, due to their properties of band-gap reduction and spin-orbit splitting. The incorporation of Bi into antimonide based III-V semiconductors is very attractive for the development of new optoelectronic devices working in the mid-infrared range (2-5 $\mu$m). However, due to its large size, Bi does not readily incorporate into III-V alloys and the epitaxy of III-V dilute bismides is thus very challenging. This book chapter presents the most recent developments in the epitaxy and characterization of GaSbBi alloys and heterostructures.

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O. Delorme, L. Cerutti, R. Kudrawiec, Esperanza Luna, J. Kopaczek, M. Gladysiewicz, A. Trampert, E. Tournié, J. -B. Rodriguez. 2019-10-24. GaSbBi alloys and heterostructures: fabrication and properties. https://doi.org/10.1007/978-981-13-8078-5_6

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