arXiv subjects

L. Cerutti

Publications and source records attributed to L. Cerutti.

5 recordsLinked to original sources

arXiv2025

Midinfrared Semiconductor Photonics - A Roadmap

Semiconductor photonic devices operating in the midwave infrared (mid-IR, which we roughly define here as wavelengths spanning 3 to 14 microns) uniquely address a wide range of current practical needs. These include chemical sensing, environmental monitoring, industrial process control, medical diagnostics, thermal imaging, LIDAR, free space optical communication, and security monitoring. However, mid-IR device technologies are currently still works in progress that are generally much less mature than their near infrared and visible counterparts. Not only are most of the relevant materials more difficult to grow and process, but attainment of the desired optical device performance is often fundamentally more challenging. This Roadmap will review the leading applications for mid-IR optoelectronics, summarize the status and deficiencies of current device technologies, and then suggest possible roadmaps for improving and maturing the performance, manufacturability, and cost of each device type so the critical needs that are uniquely addressed by mid-IR photonics can be satisfied.

physics.optics↗

arXiv2020

Zinc-Blende group III-V/group IV epitaxy: importance of the miscut

Here, we clarify the central role of the miscut during group III-V/ group IV crystal growth. We show that the miscut first impacts the initial antiphase domain distribution, with two distinct nucleation-driven and terraces-driven regimes. It is then inferred how the antiphase domain distribution mean phase and mean lateral length are affected by the miscut. An experimental confirmation is given through the comparison of antiphase domain distributions in GaP and GaSb/AlSb samples grown on nominal and vicinal Si substrates. The antiphase domain burying step of GaP/Si samples is then observed at the atomic scale by scanning tunneling microscopy. The steps arising from the miscut allow growth rate imbalance between the two phases of the crystal and the growth conditions can deeply modify the imbalance coefficient, as illustrated with GaAs/Si. We finally explain how a monodomain III-V semiconductor configuration can be achieved even on low miscut substrates.

cond-mat.mtrl-sci↗

arXiv2019

GaSbBi alloys and heterostructures: fabrication and properties

Dilute bismuth (Bi) III-V alloys have recently attracted great attention, due to their properties of band-gap reduction and spin-orbit splitting. The incorporation of Bi into antimonide based III-V semiconductors is very attractive for the development of new optoelectronic devices working in the mid-infrared range (2-5 $μ$m). However, due to its large size, Bi does not readily incorporate into III-V alloys and the epitaxy of III-V dilute bismides is thus very challenging. This book chapter presents the most recent developments in the epitaxy and characterization of GaSbBi alloys and heterostructures.

cond-mat.mtrl-sci↗

arXiv2019

Molecular-beam epitaxy of GaSb on 6{\textdegree}-offcut (001) Si using a GaAs nucleation layer

We studied and optimized the molecular beam epitaxy of GaSb layers on vicinal (001) Si substrates using a GaAs nucleation layer. An in-depth analysis of the different growth stages under optimized conditions revealed the formation of a high density of small GaAs islands forming a quasi-two-dimensional layer. GaSb then nucleated atop this layer as three-dimensional islands before turning to two-dimensional growth within a few nanometers. Moreover, reflexion high-energy electron diffraction revealed a fast relaxation of GaAs on Si and of GaSb on GaAs. The GaSb layer quality was better than that of similar layers grown on Si through AlSb nucleation layers.

cond-mat.mtrl-sci↗

arXiv2018

A universal description of III-V/Si epitaxial growth processes

Here, we experimentally and theoretically clarify III-V/Si crystal growth processes. Atomically-resolved microscopy shows that mono-domain 3D islands are observed at the early stages of AlSb, AlN and GaP epitaxy on Si, independently of misfit. It is also shown that complete III-V/Si wetting cannot be achieved in most III-V/Si systems. Surface/interface contributions to the free energy variations are found to be prominent over strain relief processes. We finally propose a general and unified description of III-V/Si growth processes, including the description of antiphase boundaries formation.

cond-mat.mtrl-sci↗