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arXiv · 1911.01784

Opto-electronic properties of alpha-In2Se3: single-layer to bulk

Yujin Cho·Sean M. Anderson·Bernardo S. Mendoza·Shun Okano·Ramon Carriles·N. Arzate·Anatoli I. Shkrebtii·Di Wu·Keji Lai·D. R. T. Zahn·M. C. Downer
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Abstract

In this work, we report linear and non-linear spectroscopic measurements of chemically-grown layered (from one to 37 quintuple layers) and bulk alpha-In2Se3 samples over a photon energy range of 1.0--4 eV, and compare with ab initio density functional theory calculations, including bandstructures and G0W0 calculations.

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Yujin Cho, Sean M. Anderson, Bernardo S. Mendoza, Shun Okano, Ramon Carriles, N. Arzate, Anatoli I. Shkrebtii, Di Wu, Keji Lai, D. R. T. Zahn, M. C. Downer. 2019-11-05. Opto-electronic properties of alpha-In2Se3: single-layer to bulk. https://doi.org/10.1103/physrevmaterials.6.034006

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