arXiv · 1911.01794
Molecular beam epitaxy of CuMnAs
Abstract
We present a detailed study of the growth of the tetragonal polymorph of antiferromagnetic CuMnAs by the molecular beam epitaxy technique. We explore the parameter space of growth conditions and their effect on the microstructural and transport properties of the material. We identify its typical structural defects and compare the properties of epitaxial CuMnAs layers grown on GaP, GaAs and Si substrates. Finally, we investigate the correlation between the crystalline quality of CuMnAs and its performance in terms of electrically induced resistance switching.
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Filip Krizek, Zdeněk Kašpar, Aliaksei Vetushka, Dominik Kriegner, Elisabetta M. Fiordaliso, Jan Michalicka, Ondřej Man, Jan Zubáč, Martin Brajer, Victoria A. Hills, Kevin W. Edmonds, Peter Wadley, Richard P. Campion, Kamil Olejník, Tomáš Jungwirth, Vít Novák. 2019-11-05. Molecular beam epitaxy of CuMnAs. https://doi.org/10.1103/physrevmaterials.4.014409
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