arXiv subjects

Peter Wadley

Publications and source records attributed to Peter Wadley.

14 recordsLinked to original sources

arXiv2026

Atomic-Scale Observation of Symmetry Breaking in Altermagnetic MnTe

The recent discovery of altermagnetism has sparked growing interest in compensated magnetic systems as promising platforms for highly scalable spintronics. Altermagnetism is a distinct magnetic order where opposite spin sublattices are connected by rotation, yielding zero net magnetization but momentum-dependent spin splitting. To date, experimental verification of altermagnetic order has been achieved predominantly through bulk-sensitive techniques, including spin-dependent electronic spectra and transport responses. However, direct atomic-scale evidence that explicitly correlates crystal symmetry, local structural distortions, and magnetic ordering has remained unexplored. Here, we report the direct atomic-scale observation of coexisting polar distortions and altermagnetic order in MnTe, combining atomic resolution scanning transmission electron microscopy (STEM) imaging with electron magnetic chiral dichroism (EMCD) measurements. We reveal that MnTe is not an ideal uniform P63/mmc g-wave altermagnet at the atomic scale. Instead, it hosts ubiquitous inversion-symmetry-breaking distortions that lower the spin-space-group (SSG) symmetry, admits d-wave altermagnetic components, and in lower-symmetry regimes, even allow s-wave spin splitting (net magnetization). The coexistence of ferroelectric signatures and altermagnetic order establishes local lattice symmetry in MnTe as a control knob for altermagnetic spin splitting, spin current generation, and multiferroic memory applications.

cond-mat.mtrl-sci↗

arXiv2026

Topological Superconductivity in Altermagnetic Heterostructures on a Honeycomb Lattice

Altermagnet-superconductor heterostructures have been shown, in principle, to provide a route towards realising topological superconductivity, and therefore host topologically protected boundary states. In this work we demonstrate that the topological states observed are dependent on the structure of the underlying lattice. By deriving and analysing a model on a honeycomb lattice, we demonstrate that the topological phase diagram has a rich structure containing both chiral edge modes and Majorana corner modes, the latter of which are an indication of higher-order topology. We analyse the effect of disorder on these states and find that whilst the edge modes are robust to a disordered system, any potential observation of the corner modes may be sensitive to the microscopic details. In particular, we show that vacancies can lead to other low energy bound states that may be difficult to distinguish from the corner modes.

cond-mat.mes-hall↗

arXiv2025

Anomalous temperature dependence of local magnetic fields in altermagnetic MnTe

Altermagnets are a novel type of magnetic system that has a spin-polarised electric band structure in the absence of a net magnetic moment, leading to exciting prospects in potential device applications. Hexagonal MnTe, a prototypical altermagnet, has arguably shown the most properties consistent with theoretical predictions, including an anomalous Hall effect despite no net magnetisation, and strong altermagnet-induced spin splitting in the electronic band structure. Here we present muon-spin spectroscopy measurements of a single crystal of MnTe. Below room temperature we observe pronounced anomalies in the muon-spin depolarisation, as well as the onset of a second, non-proportional internal field in the absence of an applied field. These findings point to a change in the magnetic structure around $T\simeq250$ K, which coincides with other changes in reported properties, such as transport.

cond-mat.mtrl-sci↗

arXiv2023

Magneto-Acoustic Waves in antiferromagnetic CuMnAs excited by Surface Acoustic Waves

Magnetoelastic effects in antiferromagnetic CuMnAs are investigated by applying dynamic strain in the 0.01% range through surface acoustic waves in the GaAs substrate. The magnetic state of the CuMnAs/GaAs is characterized by a multitude of submicron-sized domains which we image by x-ray magnetic linear dichroism combined with photoemission electron microscopy. Within the explored strain range, CuMnAs shows magnetoelastic effects in the form of N\'eel vector waves with micrometer wavelength, which corresponds to an averaged overall spin-axis rotation up to 2.4 deg driven by the time-dependent strain from the surface acoustic wave. Measurements at different temperatures indicate a reduction of the wave amplitude when lowering the temperature. However, no domain wall motion has been detected on the nanosecond timescale

cond-mat.mes-hall↗

arXiv2023

Magnetic domain engineering in antiferromagnetic CuMnAs and Mn$_2$Au devices

Antiferromagnetic materials hold potential for use in spintronic devices with fast operation frequencies and field robustness. Despite the rapid progress in proof-of-principle functionality in recent years, there has been a notable lack of understanding of antiferromagnetic domain formation and manipulation, which translates to either incomplete or non-scalable control of the magnetic order. Here, we demonstrate simple and functional ways of influencing the domain structure in CuMnAs and Mn2Au, two key materials of antiferromagnetic spintronics research, using device patterning and strain engineering. Comparing x-ray microscopy data from two different materials, we reveal the key parameters dictating domain formation in antiferromagnetic devices and show how the non-trivial interaction of magnetostriction, substrate clamping and edge anisotropy leads to specific equilibrium domain configurations. More specifically, we observe that patterned edges have a significant impact on the magnetic anisotropy and domain structure over long distances, and we propose a theoretical model that relates short-range edge anisotropy and long-range magnetoelastic interactions. The principles invoked are of general applicability to the domain formation and engineering in antiferromagnetic thin films at large, which will pave the way towards realizing truly functional antiferromagnetic devices.

cond-mat.mtrl-sci↗

arXiv2022

Probing the Manipulation of Antiferromagnetic Order in CuMnAs Films Using Neutron Diffraction

We describe measurements of the uniaxial magnetic anisotropy and spin-flop rotation of the Néel vector in antiferromagnetic CuMnAs thin films using neutron diffraction. The suppression of the magnetic (100) peak under magnetic fields is observed for films as thin as 20 nm indicating that they undergo a spin-flop transition. Good agreement is found between neutron diffraction and electron transport measurements of the spin-flop rotation in the same layer, with a similar shape and hysteresis of the obtained curves, while the neutron measurements provide a quantitative determination of the spin flop extent throughout the antiferromagnet layer.

cond-mat.mtrl-sci↗

arXiv2022

Experimental electronic structure of the electrically switchable antiferromagnet CuMnAs

Tetragonal CuMnAs is a room temperature antiferromagnet with an electrically reorientable Néel vector and a Dirac semimetal candidate. Direct measurements of the electronic structure of single-crystalline thin films of tetragonal CuMnAs using angle-resolved photoemission spectroscopy (ARPES) are reported, including Fermi surfaces (FS) and energy-wavevector dispersions. After correcting for a chemical potential shift of $\approx-390$ meV (hole doping), there is excellent agreement of FS, orbital character of bands, and Fermi velocities between the experiment and density functional theory calculations. Additionally, 2x1 surface reconstructions are found in the low energy electron diffraction (LEED) and ARPES. This work underscores the need to control the chemical potential in tetragonal CuMnAs to enable the exploration and exploitation of the Dirac fermions with tunable masses, which are predicted to be above the chemical potential in the present samples.

cond-mat.mtrl-sci↗

arXiv2021

Defect-driven antiferromagnetic domain walls in CuMnAs films

Efficient manipulation of antiferromagnetic (AF) domains and domain walls has opened up new avenues of research towards ultrafast, high-density spintronic devices. AF domain structures are known to be sensitive to magnetoelastic effects, but the microscopic interplay of crystalline defects, strain and magnetic ordering remains largely unknown. Here, we reveal, using photoemission electron microscopy combined with scanning X-ray diffraction imaging and micromagnetic simulations, that the AF domain structure in CuMnAs thin films is dominated by nanoscale structural twin defects. We demonstrate that microtwin defects, which develop across the entire thickness of the film and terminate on the surface as characteristic lines, determine the location and orientation of 180 degree and 90 degree domain walls. The results emphasize the crucial role of nanoscale crystalline defects in determining the AF domains and domain walls, and provide a route to optimizing device performance.

cond-mat.mtrl-sci↗

arXiv2021

Quenching of an antiferromagnet into high resistivity states using electrical or ultrashort optical pulses

Ultra-fast dynamics, insensitivity to external magnetic fields, or absence of magnetic stray fields are examples of properties that make antiferromagnets of potential use in the development of spintronic devices. Similar to their ferromagnetic counterparts, antiferromagnets can store information in the orientations of the collective magnetic order vector. However, also in analogy to ferromagnets, the readout magnetoresistivity signals in simple antiferromagnetic films have been weak and the extension of the electrical reorientation mechanism to optics has not been achieved. Here we report reversible and reproducible quenching of an antiferromagnetic CuMnAs film by either electrical or ultrashort optical pulses into nano-fragmented domain states. The resulting resistivity changes approach 20\% at room temperature, which is comparable to the giant magnetoresistance ratios in ferromagnetic multilayers. We also obtain a signal readout by optical reflectivity. The analog time-dependent switching and relaxation characteristics of our devices can mimic functionality of spiking neural network components.

physics.app-ph↗

arXiv2020

Atomically sharp domain walls in an antiferromagnet

The interest in understanding scaling limits of magnetic textures such as domain walls spans the entire field of magnetism from its relativistic quantum fundamentals to applications in information technologies. The traditional focus of the field on ferromagnets has recently started to shift towards antiferromagnets which offer a rich materials landscape and utility in ultra-fast and neuromorphic devices insensitive to magnetic field perturbations. Here we report the observation that domain walls in an epitaxial crystal of antiferromagnetic CuMnAs can be atomically sharp. We reveal this ultimate domain wall scaling limit using differential phase contrast imaging within aberrationcorrected scanning transmission electron microscopy, which we complement by X-ray magnetic dichroism microscopy and ab initio calculations. We highlight that the atomically sharp domain walls are outside the remits of established spin-Hamiltonian theories and can offer device functionalities unparalleled in ferromagnets.

cond-mat.mtrl-sci↗

arXiv2020

Magneto-Seebeck microscopy of domain switching in collinear antiferromagnet CuMnAs

Antiferromagnets offer spintronic device characteristics unparalleled in ferromagnets owing to their lack of stray fields, THz spin dynamics, and rich materials landscape. Microscopic imaging of aniferromagnetic domains is one of the key prerequisites for understading physical principles of the device operation. However, adapting common magnetometry techniques to the dipolar-field-free antiferromagnets has been a major challenge. Here we demonstrate in a collinear antiferromagnet a thermoelectric detection method by combining the magneto-Seebeck effect with local heat gradients generated by scanning far-field or near-field techniques. In a 20 nm epilayer of uniaxial CuMnAs we observe reversible 180 deg switching of the Néel vector via domain wall displacement, controlled by the polarity of the current pulses. We also image polarity-dependent 90 deg switching of the Néel vector in a thicker biaxial film, and domain shattering induced at higher pulse amplitudes. The antiferromagnetic domain maps obtained by our laboratory technique are compared to measurements by the established synchrotron microscopy using X-ray magnetic linear dichroism.

physics.app-ph↗

arXiv2020

Emerging edge states on the surface of the epitaxial semimetal CuMnAs thin film

Epitaxial thin films of CuMnAs have recently attracted attention due to their potential to host relativistic antiferromagnetic spintronics and exotic topological physics. Here we report on the structural and electronic properties of a tetragonal CuMnAs thin film studied using scanning tunneling microscopy (STM) and density functional theory (DFT). STM reveals a surface terminated by As atoms, with the expected semi-metallic behavior. An unexpected zigzag step edge surface reconstruction is observed with emerging electronic states below the Fermi energy. DFT calculations indicate that the step edge reconstruction can be attributed to an As deficiency that results in changes in the density of states of the remaining As atoms at the step edge. This understanding of the surface structure and step edges on the CuMnAs thin film will enable in-depth studies of its topological properties and magnetism.

cond-mat.mes-hall↗

arXiv2019

Molecular beam epitaxy of CuMnAs

We present a detailed study of the growth of the tetragonal polymorph of antiferromagnetic CuMnAs by the molecular beam epitaxy technique. We explore the parameter space of growth conditions and their effect on the microstructural and transport properties of the material. We identify its typical structural defects and compare the properties of epitaxial CuMnAs layers grown on GaP, GaAs and Si substrates. Finally, we investigate the correlation between the crystalline quality of CuMnAs and its performance in terms of electrically induced resistance switching.

cond-mat.mtrl-sci↗

arXiv2015

Electrical switching of an antiferromagnet

Louis Neel pointed out in his Nobel lecture that while abundant and interesting from a theoretical viewpoint, antiferromagnets did not seem to have any applications. Indeed, the alternating directions of magnetic moments on individual atoms and the resulting zero net magnetization make antiferromagnets hard to control by tools common in ferromagnets. Remarkably, Neel in his lecture provides the key which, as we show here, allows us to control antiferromagnets by electrical means analogous to those which paved the way to the development of ferromagnetic spintronics applications. The key noted by Neel is the equivalence of antiferromagnets and ferromagnets for effects that are an even function of the magnetic moment. Based on even-in-moment relativistic transport phenomena, we demonstrate room-temperature electrical switching between two stable configurations combined with electrical read-out in antiferromagnetic CuMnAs thin film devices. Our magnetic memory is insensitive to and produces no magnetic field perturbations which illustrates the unique merits of antiferromagnets for spintronics.

cond-mat.mes-hall↗