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arXiv · 1911.08347

SiC Cantilevers For Generating Uniaxial Stress

Boyang Jiang·Noah Opondo·Gary Wolfowicz·Pen-Li Yu·David D. Awschalom·Sunil A. Bhave
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Abstract

This paper demonstrates the first beam resonators fabricated from bulk high purity semi-insulating 4H Silicon Carbide wafers (HPSI 4H-SiC). Our innovations include: (1) Multi-level front-side, back-side inductively coupled plasma-deep reactive ion etching (ICP-DRIE) technology to fabricate thin, low-mass, bending-mode resonators framed by the SiC substrate (2) Laser Doppler Vibrometer (LDV) measurements of mechanical quality factors (Q) > 10,000 with frequencies ranging from 300 kHz to 8MHz and (3) Calculated uniaxial in-plane surface stress 20 MPa at top surface of resonator base when operating at resonance in vacuum.

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Boyang Jiang, Noah Opondo, Gary Wolfowicz, Pen-Li Yu, David D. Awschalom, Sunil A. Bhave. 2019-11-19. SiC Cantilevers For Generating Uniaxial Stress. https://doi.org/10.1109/transducers.2019.8808560

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