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arXiv · 1912.02960

Gate-tunable h/e-period magnetoresistance oscillations in Bi2O2Se nanowires

Jianghua Ying·Guang Yang·Zhaozheng Lyu·Guangtong Liu·Zhongqing Ji·Jie Fan·Changli Yang·Xiunian Jing·Huaixin Yang·Li Lu·Fanming Qu
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Abstract

We report on the successful synthesis and low-temperature electron transport investigations of a new form of material - Bi2O2Se semiconducting nanowires. Gate-tunable 0- and $π$-h/e (h is the Planck constant and e the elementary charge) periodic resistance oscillations in longitudinal magnetic field were observed unexpectedly, demonstrating novel quasi-ballistic, phase-coherent surface states in Bi2O2Se nanowires. By reaching a very good agreement between the calculated density of states and the experimental data, we clarified the mechanism to be the one dimensional subbands formed along the circumference of the nanowire rather than the usually considered Aharonov-Bohm interference. A qualitative physical picture based on downward band bending associated with the complex band structure is proposed to describe the formation of the surface states.

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Jianghua Ying, Guang Yang, Zhaozheng Lyu, Guangtong Liu, Zhongqing Ji, Jie Fan, Changli Yang, Xiunian Jing, Huaixin Yang, Li Lu, Fanming Qu. 2019-12-14. Gate-tunable h/e-period magnetoresistance oscillations in Bi2O2Se nanowires. https://doi.org/10.1103/physrevb.100.235307

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