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arXiv · 1912.04480

Resistance Drift in Ge2Sb2Te5 Phase Change Memory Line Cells at Low Temperatures and Its Response to Photoexcitation

Raihan Sayeed Khan·Faruk Dirisaglik·Ali Gokirmak·Helena Silva
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Abstract

Resistance drift in phase change materials is characterized in amorphous phase change memory line-cells from 300 K to 125 K range and is observed to follow the previously reported power-law behavior with drift coefficients in the 0.07 to 0.11 range in dark. While these drift coefficients measured in dark are similar to commonly observed drift coefficients (~0.1) at and above room temperature, measurements under light show a significantly lower drift coefficient (0.05 under illumination versus 0.09 in dark at 150K). Periodic on/off switching of light shows sudden decrease/increase of resistance, attributed to photo-excited carriers, followed by a very slow response (~30 minutes at 150 K) attributed to contribution of charge traps. Continuation of the resistance drift at low temperatures and the observed photo-response suggest that resistance drift in amorphous phase change materials is predominantly an electronic process.

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Raihan Sayeed Khan, Faruk Dirisaglik, Ali Gokirmak, Helena Silva. 2019-12-10. Resistance Drift in Ge2Sb2Te5 Phase Change Memory Line Cells at Low Temperatures and Its Response to Photoexcitation. https://arxiv.org/abs/1912.04480

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