UV-laser modification and selective ion-beam etching of amorphous vanadium pentoxide thin films

Alexander Cheremisin; Vadim Putrolaynen; Andrei Velichko; Alexander Pergament; Nikolay Kuldin; Alexander Grishin

doi:10.1002/pssa.200824175

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arXiv · 2001.03054

UV-laser modification and selective ion-beam etching of amorphous vanadium pentoxide thin films

Alexander Cheremisin·Vadim Putrolaynen·Andrei Velichko·Alexander Pergament·Nikolay Kuldin·Alexander Grishin

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Abstract

We present the results on excimer laser modification and patterning of amorphous vanadium pentoxide films. Wet positive resist-type and Ar ion-beam negative resist-type etching techniques were employed to develop UV-modified films. V2O5 films were found to possess sufficient resistivity compared to standard electronic materials thus to be promising masks for sub-micron lithog-raphy

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Alexander Cheremisin, Vadim Putrolaynen, Andrei Velichko, Alexander Pergament, Nikolay Kuldin, Alexander Grishin. 2020-01-08. UV-laser modification and selective ion-beam etching of amorphous vanadium pentoxide thin films. https://doi.org/10.1002/pssa.200824175

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