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arXiv · 2001.07674

Huge linear magnetoresistance due to open orbits in $\gamma$-PtBi$_2$

Beilun Wu·Víctor Barrena·Hermann Suderow·Isabel Guillamón
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Abstract

Some single-crystalline materials present an electrical resistivity which decreases between room temperature and low temperatures at zero magnetic field as in a good metal and switches to a nearly semiconductinglike behavior at low temperatures with the application of a magnetic field. Often, this is accompanied by a huge and nonsaturating linear magnetoresistance which remains difficult to explain. Here we present a systematic study of the magnetoresistance in single-crystal $\gamma$-PtBi$_2$. We observe that the angle between the magnetic field and the crystalline $c$ axis fundamentally changes the magnetoresistance, going from a saturating to a nonsaturating magnetic field dependence. In between, there is one specific angle where the magnetoresistance is perfectly linear with the magnetic field. We show that the linear dependence of the nonsaturating magnetoresistance is due to the formation of open orbits in the Fermi surface of $\gamma$-PtBi$_2$.

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Beilun Wu, Víctor Barrena, Hermann Suderow, Isabel Guillamón. 2020-01-21. Huge linear magnetoresistance due to open orbits in $\gamma$-PtBi$_2$. https://doi.org/10.1103/physrevresearch.2.022042

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