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arXiv · 2002.04371

Bound hole states associated to individual vanadium atoms incorporated into monolayer WSe$_2$

Pierre Mallet·Florian Chiapello·Hanako Okuno·Hervé Boukari·Matthieu Jamet·Jean-Yves Veuillen
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Abstract

Doping a two-dimensional semiconductor with magnetic atoms is a possible route to induce magnetism in the material. We report on the atomic structure and electronic properties of monolayer WSe$_2$ intentionally doped with vanadium atoms by means of scanning transmission electron microscopy and scanning tunneling microscopy and spectroscopy. Most of the V atoms incorporate at W sites. These V$_W$ dopants are negatively charged, which induces a localized bound state located 140 meV above the valence band maximum. The overlap of the electronic potential of two charged V$_W$ dopants generates additional in-gap states. Eventually, the negative charge may suppress the magnetic moment on the V$_W$ dopants.

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Pierre Mallet, Florian Chiapello, Hanako Okuno, Hervé Boukari, Matthieu Jamet, Jean-Yves Veuillen. 2020-02-11. Bound hole states associated to individual vanadium atoms incorporated into monolayer WSe$_2$. https://doi.org/10.1103/physrevlett.125.036802

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