arXiv subjects

Hervé Boukari

Publications and source records attributed to Hervé Boukari.

7 recordsLinked to original sources

arXiv2024

Magnetic evolution of Cr$_2$Te$_3$ epitaxially grown on graphene with post-growth annealing

Two-dimensional and van der Waals ferromagnets are ideal platform to study low dimensional magnetism and proximity effects in van der Waals heterostructures. Their ultimate two dimensional character offers also the opportunity to easily adjust their magnetic properties using strain or electric fields. Among 2D ferromagnets, the Cr$_{1+x}$Te$_2$ compounds with $x$=0-1 are very promising because their magnetic properties depend on the amount of self-intercalated Cr atoms between pure CrTe$_2$ layers and the Curie temperature (T$_C$) can reach room temperature for certain compositions. Here, we investigate the evolution of the composition, structural and magnetic properties of thin Cr$_{1.33}$Te$_2$ (Cr$_2$Te$_3$) films epitaxially grown on graphene upon annealing. We observe a transition above 450°C from the Cr$_{1.33}$Te$_2$ phase with perpendicular magnetic anisotropy and a T$_C$ of 180 K to a composition close to Cr$_{1.39}$Te$_2$ with in-plane magnetic anisotropy and a T$_C$ of 240-250 K. This phase remains stable up to 650°C above which a pure Cr film starts to form. This work demonstrates the complex interplay between intercalated Cr, lattice parameters and magnetic properties in Cr$_{1+x}$Te$_2$ compounds.

cond-mat.mtrl-sci↗

arXiv2022

Evidence for Highly p-type doping and type II band alignment in large scale monolayer WSe2 /Se-terminated GaAs heterojunction grown by Molecular beam epitaxy

Two-dimensional materials (2D) arranged in hybrid van der Waals (vdW) heterostructures provide a route toward the assembly of 2D and conventional III-V semiconductors. Here, we report the structural and electronic properties of single layer WSe2 grown by molecular beam epitaxy on Se-terminated GaAs(111)B. Reflection high-energy electron diffraction images exhibit sharp streaky features indicative of a high-quality WSe2 layer produced via vdW epitaxy. This is confirmed by in-plane x-ray diffraction. The single layer of WSe2 and the absence of interdiffusion at the interface are confirmed by high resolution X-ray photoemission spectroscopy and high-resolution transmission microscopy. Angle-resolved photoemission investigation revealed a well-defined WSe2 band dispersion and a high p-doping coming from the charge transfer between the WSe2 monolayer and the Se-terminated GaAs substrate. By comparing our results with local and hybrid functionals theoretical calculation, we find that the top of the valence band of the experimental heterostructure is close to the calculations for free standing single layer WSe2. Our experiments demonstrate that the proximity of the Se-terminated GaAs substrate can significantly tune the electronic properties of WSe2. The valence band maximum (VBM, located at the K point of the Brillouin zone) presents an upshifts of about 0.56 eV toward the Fermi level with respect to the VBM of WSe2 on graphene layer, which is indicative of high p-type doping and a key feature for applications in nanoelectronics and optoelectronics.

cond-mat.mes-hall↗

arXiv2021

Phonon dynamics and thermal conductivity of PtSe2 thin films: Impact of crystallinity and film thickness on heat dissipation

We present a comparative investigation of the influence of crystallinity and film thickness on the acoustic and thermal properties of 2D layered PtSe2 thin films of varying thickness (0.6-24 nm) by combining a set of experimental techniques, namely, frequency domain thermo-reflectance, low-frequency Raman and pump-probe coherent phonon spectroscopy. We find a 35% reduction in the cross-plane thermal conductivity of polycrystalline films with thickness larger than 12 nm compared to the crystalline films of the same thickness due to phonon grain boundary scattering. Density functional theory calculations are in good agreement with the experiments and further reveal the ballistic nature of cross-plane heat transport in PtSe2 up to a certain thickness (~20 nm). In addition, our experiments revealed strong interlayer interactions in PtSe2, short acoustic phonon lifetimes in the range of picoseconds, out-of-plane elastic constant C33=31.8 GPa and layer-dependent group velocity ranging from 1340 m/s in bilayer PtSe2 to 1873 m/s in 8 layers of PtSe2. The potential of tuning the lattice cross-plane thermal conductivity of layered 2D materials with the level of crystallinity and the real-time observation of coherent phonon dynamics, which have direct implications on the cooling and transport of electrons, open a new playground for research in 2D thermoelectric devices and provide guidelines for thermal management in 2D electronics.

cond-mat.mtrl-sci↗

arXiv2021

High carrier mobility in single-crystal PtSe2 grown by molecular beam epitaxy on ZnO(0001)

PtSe2 is attracting considerable attention as a high mobility two-dimensional material with envisionned applications in microelectronics, photodetection and spintronics. The growth of high quality PtSe2 on insulating substrates with wafer-scale uniformity is a prerequisite for electronic transport investigations and practical use in devices. Here, we report the growth of highly oriented few-layers PtSe2 on ZnO(0001) by molecular beam epitaxy. The crystalline structure of the films is characterized with electron and X-ray diffraction, atomic force microscopy and transmission electron microscopy. The comparison with PtSe2 layers grown on graphene, sapphire, mica, SiO2 and Pt(111) shows that among insulating substrates, ZnO(0001) yields films of superior structural quality. Hall measurements performed on epitaxial ZnO/PtSe2 with 5 monolayers of PtSe2 show a clear semiconducting behaviour and a high mobility in excess of 200 cm2V 1s-1 at room temperature and up to 447 cm2V-1s-1 at low temperature.

cond-mat.mtrl-sci↗

arXiv2020

Bound hole states associated to individual vanadium atoms incorporated into monolayer WSe$_2$

Doping a two-dimensional semiconductor with magnetic atoms is a possible route to induce magnetism in the material. We report on the atomic structure and electronic properties of monolayer WSe$_2$ intentionally doped with vanadium atoms by means of scanning transmission electron microscopy and scanning tunneling microscopy and spectroscopy. Most of the V atoms incorporate at W sites. These V$_W$ dopants are negatively charged, which induces a localized bound state located 140 meV above the valence band maximum. The overlap of the electronic potential of two charged V$_W$ dopants generates additional in-gap states. Eventually, the negative charge may suppress the magnetic moment on the V$_W$ dopants.

cond-mat.mtrl-sci↗

arXiv2019

Spatiotemporal electronic spin fluctuations in random nuclear fields in n-CdTe

We report on the dynamics of electron spins in n-doped CdTe layers that differs significantly from the expected response derived from the studies dedicated to electron spin relaxation in n-GaAs. At zero magnetic field, the electron spin noise spectra exhibit a two-peak structure - a zero-frequency line and a satellite - that we attribute to the electron spin precession in a frozen random nuclear spin distribution. This implies a surprisingly long electron spin correlation time whatever the doping level, even above the Mott transition. Using spatiotemporal spin noise spectroscopy, we demonstrate that the observation of a satellite in the spin noise spectra and a fast spin diffusion are mutually exclusive. This is consistent with a shortening of the electron spin correlation time due to hopping between donors. We interpret our data via a model assuming that the low temperature spin relaxation is due to hopping between donors in presence of hyperfine and anisotropic exchange interactions. Most of our results can be interpreted in this framework. First, a transition from inhomogeneous to homogeneous broadening of the spin noise peaks and the disappearance of the satellite are observed when the hopping rate becomes larger than the Larmor period induced by the local nuclear fields. In the regime of homogeneous broadening the ratio between the spin diffusion constant and the spin relaxation rate has a value in good agreement with the Dresselhaus constant. In the regime of inhomogeneous broadening, most of the samples exhibit a broadening consistent with the distribution of local nuclear fields. We obtain a new estimate of the hyperfine constants in CdTe and a value of 0.10 Tesla for the maximum nuclear field. Finally, our study also reveals a puzzle as our samples behave as if the active donor concentration was reduced by several orders of magnitudes with respect to the nominal values.

cond-mat.mes-hall↗

arXiv2015

Atomic-like spin noise in solid-state demonstrated with manganese in cadmium telluride

Spin noise spectroscopy is an optical technique which can probe spin resonances non-perturbatively. First applied to atomic vapours, it revealed detailed information about nuclear magnetism and the hyperfine interaction. In solids, this approach has been limited to carriers in semiconductor heterostructures. Here we show that atomic-like spin fluctuations of Mn ions diluted in CdT e (bulk and quantum wells) can be detected through the Kerr rotation associated to excitonic transitions. Zeeman transitions within and between hyperfine multiplets are clearly observed in zero and small magnetic fields and reveal the local symmetry because of crystal field and strain. The linewidths of these resonances are close to the dipolar limit. The sensitivity is high enough to open the way towards the detection of a few spins in systems where the decoherence due to nuclear spins can be suppressed by isotopic enrichment, and towards spin resonance microscopy with important applications in biology and materials science.

cond-mat.mtrl-sci↗