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arXiv · 2002.07070

28nm Fully-Depleted SOI Technology: Cryogenic Control Electronics for Quantum Computing

H. Bohuslavskyi·S. Barraud·M. Cassé·V. Barral·B. Bertrand·L. Hutin·F. Arnaud·P. Galy·M. Sanquer·S. De Franceschi·M. Vinet
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Abstract

This paper reports the first cryogenic characterization of 28nm Fully-Depleted-SOI CMOS technology. A comprehensive study of digital/analog performances and body-biasing from room to the liquid helium temperature is presented. Despite a cryogenic operation, effectiveness of body-biasing remains unchanged and provides an excellent $V_{TH}$ controllability. Low-temperature operation enables higher drive current and a largely reduced subthreshold swing (down to 7mV/dec). FDSOI can provide a valuable approach to cryogenic low-power electronics. Applications such as classical control hardware for quantum processors are envisioned.

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H. Bohuslavskyi, S. Barraud, M. Cassé, V. Barral, B. Bertrand, L. Hutin, F. Arnaud, P. Galy, M. Sanquer, S. De Franceschi, M. Vinet. 2019-12-20. 28nm Fully-Depleted SOI Technology: Cryogenic Control Electronics for Quantum Computing. https://doi.org/10.23919/snw.2017.8242338

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