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arXiv · 2002.07333

Evidence of itinerant holes for long-range magnetic order in tungsten diselenide semiconductor with vanadium dopants

Bumsub Song·Seok Joon Yun·Jinbao Jiang·Kory Beach·Wooseon Choi·Young-Min Kim·Humberto Terrones·Young Jae Song·Dinh Loc Duong·Young Hee Lee
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Abstract

One primary concern in diluted magnetic semiconductors (DMSs) is how to establish a long-range magnetic order with a low magnetic doping concentration to maintain the gate tunability of the host semiconductor, as well as to increase Curie temperature. Two-dimensional van der Waals semiconductors have been recently investigated to demonstrate the magnetic order in DMSs; however, a comprehensive understanding of the mechanism responsible for the gate-tunable long-range magnetic order in DMSs has not been achieved yet. Here, we introduce a monolayer tungsten diselenide (WSe2) semiconductor with V dopants to demonstrate the long-range magnetic order through itinerant spin-polarized holes. The V atoms are sparsely located in the host lattice by substituting W atoms, which is confirmed by scanning tunneling microscopy and high-resolution transmission electron microscopy. The V impurity states and the valence band edge states are overlapped, which is congruent with density functional theory calculations. The field-effect transistor characteristics reveal the itinerant holes within the hybridized band; this clearly resembles the Zener model. Our study gives an insight into the mechanism of the long-range magnetic order in V-doped WSe2, which can also be used for other magnetically doped semiconducting transition metal dichalcogenides.

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Bumsub Song, Seok Joon Yun, Jinbao Jiang, Kory Beach, Wooseon Choi, Young-Min Kim, Humberto Terrones, Young Jae Song, Dinh Loc Duong, Young Hee Lee. 2020-02-18. Evidence of itinerant holes for long-range magnetic order in tungsten diselenide semiconductor with vanadium dopants. https://doi.org/10.1103/physrevb.103.094432

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