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arXiv · 2002.10763

Capacitance-Voltage (C-V) Characterization of Graphene-Silicon Heterojunction Photodiodes

Sarah Riazimehr·Melkamu Belete·Satender Kataria·Olof Engström·Max Christian Lemme
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Abstract

Heterostructures of two-dimensional (2D) and three-dimensional (3D) materials form efficient devices for utilizing the properties of both classes of materials. Graphene/silicon (G/Si) Schottky diodes have been studied extensively with respect to their optoelectronic properties. Here, we introduce a method to analyze measured capacitance-voltage data of G/Si Schottky diodes connected in parallel with G/silicon dioxide/Si (GIS) capacitors. We also demonstrate the accurate extraction of the built-in potential ($\Phi$$_{bi}$) and the Schottky barrier height from the measurement data independent of the Richardson constant.

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Sarah Riazimehr, Melkamu Belete, Satender Kataria, Olof Engström, Max Christian Lemme. 2020-02-25. Capacitance-Voltage (C-V) Characterization of Graphene-Silicon Heterojunction Photodiodes. https://arxiv.org/abs/2002.10763

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