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arXiv · 2004.02649

Damping-like Torque in Monolayer 1T-TaS$_2$

Sajid Husain·Xin Chen·Rahul Gupta·Nilamani Behera·Prabhat Kumar·Tomas Edvinsson·Felipe Garcia Sanchez·Rimantas Brucas·Sujeet Chaudhary·Biplab Sanyal·Peter Svedlindh·Ankit Kumar
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Abstract

A damping-like spin orbit torque (SOT) is a prerequisite for ultralow power spin logic devices. Here, we report on the damping-like SOT in just one monolayer of the conducting transition metal dichalcogenide (TMD) TaS$_2$ interfaced with a NiFe (Py) ferromagnetic layer. The charge-spin conversion efficiency is found to be 0.25$\pm$0.03 and the spin Hall conductivity (2.63 $\times$ 10$^5$ $\frac{\hbar}{2e}$ $\Omega^{-1}$ m$^{-1}$) is found to be superior to values reported for other TMDs. The origin of this large damping-like SOT can be found in the interfacial properties of the TaS$_2$/Py heterostructure, and the experimental findings are complemented by the results from density functional theory calculations. The dominance of damping-like torque demonstrated in our study provides a promising path for designing next generation conducting TMD based low-powered quantum memory devices.

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Sajid Husain, Xin Chen, Rahul Gupta, Nilamani Behera, Prabhat Kumar, Tomas Edvinsson, Felipe Garcia Sanchez, Rimantas Brucas, Sujeet Chaudhary, Biplab Sanyal, Peter Svedlindh, Ankit Kumar. 2020-04-06. Damping-like Torque in Monolayer 1T-TaS$_2$. https://doi.org/10.1021/acs.nanolett.0c01955

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