arXiv subjects

Rimantas Brucas

Publications and source records attributed to Rimantas Brucas.

16 recordsLinked to original sources

arXiv2024

Terahertz emission from $α$-W/CoFe epitaxial spintronic emitters

We report efficient terahertz (THz) generation in epitaxial $α$-W/Co$_{60}$Fe$_{40}$ spintronic emitters. Two types of emitters have been investigated; epitaxial $α$-W$(110)$/Co$_{60}$Fe$_{40}(110)$ and $α$-W$(001)$/Co$_{60}$Fe$_{40}(001)$ deposited on single crystalline Al$_{2}$O$_{3}$($11\bar{2}0$) and MgO($001$) substrates, respectively. First principle calculations of the electronic band structure at the W$(001)$ surface reveal Dirac-type surface states, similar to that reported previously for the W$(110)$ surface. The generated THz radiation is about $10\%$ larger for $α$-W$(110)$/Co$_{60}$Fe$_{40}(110)$ grown on single crystalline Al$_{2}$O$_{3}$($11\bar{2}0$), which is explained by the fact that the $α$-W$(110)$/Co$_{60}$Fe$_{40}(110)$ interface for this emitter is more transparent to the spin current due to the presence of Ångstr\" om-scale interface intermixing at the W/CoFe interface. Our results also reveal that the generation of THz radiation is larger when pumping with the laser light from the substrate side, which is explained by a larger part of the laser light due to interference effects in the film stack being absorbed in the ferromagnetic Co$_{60}$Fe$_{40}$ layer in this measurement configuration.

physics.app-ph↗

arXiv2024

Boundary-induced phase in epitaxial iron layers

We report the discovery of a boundary-induced body-centered tetragonal (bct) iron phase in thin films deposited on MgAl$_{2}$O$_{4}$ ($001$) substrates. We present evidence for this phase using detailed x-ray analysis and ab-initio density functional theory calculations. A lower magnetic moment and a rotation of the easy magnetisation direction are observed, as compared to body-centered cubic (bcc) iron. Our findings expand the range of known crystal and magnetic phases of iron, providing valuable insights for the development of heterostructure devices using ultra-thin iron layers.

cond-mat.mtrl-sci↗

arXiv2023

Epitaxy enhancement in oxide/tungsten heterostructures by harnessing the interface adhesion

The conditions whereby epitaxy is achieved are commonly believed to be mostly governed by misfit strain. We report on a systematic investigation of growth and interface structure of single crystalline tungsten thin films on two different metal oxide substrates, Al$_{2}$O$_{3}$ ($11\bar{2}0$) and MgO ($001$). We demonstrate that despite a significant mismatch, enhanced crystal quality is observed for tungsten grown on the sapphire substrates. This is promoted by stronger adhesion and chemical bonding with sapphire compared to magnesium oxide, along with the restructuring of the tungsten layers close to the interface. The latter is supported by ab initio calculations using density functional theory. Finally, we demonstrate the growth of magnetic heterostructures consisting of high-quality tungsten layers in combination with ferromagnetic CoFe layers, which are relevant for spintronic applications.

cond-mat.mtrl-sci↗

arXiv2021

Strain Engineering of Epitaxial Pt/Fe Spintronic Terahertz Emitter

Spin-based terahertz (THz) emitters, utilizing the inverse spin Hall effect, are ultra-modern sources for the generation of THz electromagnetic radiation. To make a powerful emitter having large THz amplitude and bandwidth, fundamental understanding in terms of microscopic models is essential. This study reveals important factors to engineer the THz emission amplitude and bandwidth in epitaxial Pt/Fe emitters grown on MgO and MgAl$_2$O$_4$ (MAO) substrates, where the choice of the substrate plays an important role. The THz amplitude and bandwidth are affected by the induced strain in the Fe spin source layer. On the one hand, the THz electric field amplitude is found to be larger when Pt/Fe is grown on MgO even though the crystalline quality of the Fe film is superior when grown on MAO. This is because of the larger defect density, smaller electron relaxation time, and lower electrical conductivity in the THz regime when Fe is grown on MgO. On the other hand, the bandwidth is found to be larger for Pt/Fe grown on MAO and is explained by the uncoupled/coupled Lorentz oscillator models. This study provides an insightful pathway to further engineer metallic spintronic THz emitters in terms of the proper choice of substrate and microscopic properties of the emitter layers.

cond-mat.mtrl-sci↗

arXiv2021

Giant spin-orbit torque efficiency in all-epitaxial heterostructures

A large anti-damping spin-obit torque (SOT) efficiency in magnetic heterostructures is a prerequisite to realize energy efficient spin torque based magnetic memories and logic devices. The efficiency can be characterized in terms of the spin-orbit fields generated by anti-damping torques when an electric current is passed through the non-magnetic layer. We report a giant spin-orbit field of 48.96 (27.50) mT at an applied current density of 1 MAcm-2 in beta-W interfaced Co60Fe40 (Ni81Fe19)/TiN epitaxial structures due to an anti-damping like torque, which results in a magnetization auto-oscillation current density as low as 1.68(3.27) MAcm-2. The spin-orbit field value increases with decrease of beta-W layer thickness, which affirms that epitaxial surface states are responsible for the extraordinary large efficiency. SOT induced energy efficient in-plane magnetization switching in large 20x100 um2 structures has been demonstrated by Kerr microscopy and the findings are supported by results from micromagnetic simulations. The observed giant SOT efficiencies in the studied all-epitaxial heterostructures are comparable to values reported for topological insulators. These results confirm that by utilizing epitaxial material combinations an extraordinary large SOT efficiency can be achieved using semiconducting industry compatible 5d heavy metals, which provides immediate solutions for the realization of energy efficient spin-logic devices.

cond-mat.mtrl-sci↗

arXiv2021

Co$_2$FeAl full Heusler compound based spintronic terahertz emitter

To achieve a large terahertz (THz) amplitude from a spintronic THz emitter (STE), materials with 100\% spin polarisation such as Co-based Heusler compounds as the ferromagnetic layer are required. However, these compounds are known to loose their half-metallicity in the ultrathin film regime, as it is difficult to achieve L2$_1$ ordering, which has become a bottleneck for the film growth. Here, the successful deposition using room temperature DC sputtering of the L2$_1$ and B2 ordered phases of the Co$_2$FeAl full Heusler compound is reported. Co$_2$FeAl is used as ferromagnetic layer together with highly orientated Pt as non-ferromagnetic layer in the Co$_2$FeAl/Pt STE, where an MgO(10 nm) seed layer plays an important role to achieve the L2$_1$ and B2 ordering of Co$_2$FeAl. The generation of THz radiation in the CFA/Pt STE is presented, which has a bandwidth in the range of 0.1-4 THz. The THz electric field amplitude is optimized with respect to thickness, orientation, and growth parameters using a thickness dependent model considering the optically induced spin current, superdiffusive spin current, inverse spin Hall effect and the attenuation of THz radiation in the layers. This study, based on the full Heusler Co$_2$FeAl compound opens up a plethora possibilities in STE research involving full Heusler compounds.

cond-mat.mtrl-sci↗

arXiv2020

Damping-like Torque in Monolayer 1T-TaS$_2$

A damping-like spin orbit torque (SOT) is a prerequisite for ultralow power spin logic devices. Here, we report on the damping-like SOT in just one monolayer of the conducting transition metal dichalcogenide (TMD) TaS$_2$ interfaced with a NiFe (Py) ferromagnetic layer. The charge-spin conversion efficiency is found to be 0.25$\pm$0.03 and the spin Hall conductivity (2.63 $\times$ 10$^5$ $\frac{\hbar}{2e}$ $Ω^{-1}$ m$^{-1}$) is found to be superior to values reported for other TMDs. The origin of this large damping-like SOT can be found in the interfacial properties of the TaS$_2$/Py heterostructure, and the experimental findings are complemented by the results from density functional theory calculations. The dominance of damping-like torque demonstrated in our study provides a promising path for designing next generation conducting TMD based low-powered quantum memory devices.

cond-mat.mes-hall↗

arXiv2019

Impact of the crystal orientation on spin-orbit torques in Fe/Pd bilayers

Spin-orbit torques in ferromagnetic (FM)/non-magnetic (NM) heterostructures offer more energy-efficient means to realize spin-logic devices; however, their strengths are determined by the heterostructure interface. This work examines crystal orientation impact on the spin-orbit torque efficiency in different Fe/Pd bilayer systems. Spin torque ferromagnetic measurements evidence that the damping-like torque efficiency is higher in epitaxial than in polycrystalline bilayer structures while the field-like torque is negligible in all bilayer structures. The strength of the damping-like torque decreases with deterioration of the bilayer epitaxial quality. The present finding provides fresh insight for the enhancement of spin-orbit torques in magnetic heterostructures.

cond-mat.mtrl-sci↗

arXiv2019

Extraordinary efficient spin-orbit torque switching in (W, Ta)/epitaxial-Co60Fe40/TiN heterostructures

The giant spin Hall effect in magnetic heterostructures along with low spin memory loss and high interfacial spin mixing conductance are prerequisites to realize energy efficient spin torque based logic devices. We report giant spin Hall angle (SHA) of 28.67 (5.09) for W (Ta) interfaced epi- Co60Fe40/TiN structures. The spin-orbit torque switching current density (J_Crit) is as low as 1.82 (8.21) MA/cm2 in W (Ta)/Co60Fe40(t_CoFe)/TiN structures whose origin lies in the epitaxial interfaces. These structures also exhibit very low spin memory loss and high spin mixing conductance. These extraordinary values of SHA and therefore ultra-low J_Crit in semiconducting industry compatible epitaxial materials combinations open up a new direction for the realization of energy efficient spin logic devices by utilizing epitaxial interfaces.

cond-mat.mtrl-sci↗

arXiv2019

Spin pumping and spin torque in interfacial tailored Co2FeAl/\b{eta}-Ta layers

The Heusler ferromagnetic (FM) compound Co2FeAl interfaced with a high-spin orbit coupling non-magnetic (NM) layer is a promising candidate for energy efficient spin logic circuits. The circuit potential depends on the strength of angular momentum transfer across the FM/NM interface; hence, requiring low spin memory loss and high spin-mixing conductance. To highlight this issue, spin pumping and spin-transfer torque ferromagnetic resonance measurements have been performed on Co_2FeAl/β-Ta heterostructures tailored with Cu interfacial layers. The interface tailored structure yields an enhancement of the effective spin-mixing conductance. The interface transparency and spin memory loss corrected values of the spin-mixing conductance, spin Hall angle and spin diffusion length are found to be 3.40 \pm 0.01 \times 10^{19} m^{-2}, 0.029 \pm 0.003, and 2.3 \pm 0.5 nm, respectively. Furthermore, a high current modulation of the effective damping of around 2.1 % has been achieved at an applied current density of 1 \times 10^9 A/m^2 , which clearly indicates the potential of using this heterostructure for energy efficient control in spin devices

cond-mat.mtrl-sci↗

arXiv2019

Engineering of spin mixing conductance in Ru/FeCo/Ru interfaces: Effect of Re Doping

We have deposited polycrystalline Re doped $(Fe_{65}Co_{35})_{100-x}Re_{x}$ (0 $\leq$ x $\leq$ 12.6 at\%) thin films grown under identical conditions and sandwiched between thin layers of Ru in order to study the phenomenon of spin pumping as a function of Re concentration. In-plane and out-of-plane ferromagnetic resonance spectroscopy results show an enhancement of the Gilbert damping with an increase in Re doping. We found evidence of an increase in the real part of effective spin mixing conductance [Re($g^{\uparrow\downarrow}_{eff}$)] with the increase in Re doping of 6.6 at\%, while a decrease is evident at higher Re doping. The increase in Re($g^{\uparrow\downarrow}_{eff}$) can be linked to the Re doping induced change of the interface electronic structure in the non-magnetic Ru layer and the effect interfacial spin-orbit coupling has on the effective spin-mixing conductance. The lowest and highest values of Re($g^{\uparrow\downarrow}_{eff}$) are found to be 9.883(02) $nm^{-2}$ and 19.697(02) $nm^{-2}$ for 0 at\% and 6.6 at\% Re doping, respectively. The saturation magnetization decreases with increasing Re doping, from 2.362(13) T for the undoped film to 1.740(03) T for 12.6 at\% Re doping. This study opens a new direction of tuning the spin-mixing conductance in magnetic heterostructures by doping of the ferromagnetic layerr, which is essential for the realization of energy efficient operation of spintronic devices.

cond-mat.mtrl-sci↗

arXiv2019

Enhanced Gilbert Damping in Re doped FeCo Films: A Combined Experimental and Theoretical Study

The effects of rhenium doping in the range 0 to 10 atomic percent on the static and dynamic magnetic properties of Fe65Co35 thin films have been studied experimentally as well as with first principles electronic structure calculations focusing on the change of the saturation magnetization and the Gilbert damping parameter. Both experimental and theoretical results show that the saturation magnetization decreases with increasing Re doping level, while at the same time Gilbert damping parameter increases. The experimental low temperature saturation magnetic induction exhibits a 29 percent decrease, from 2.31 T to 1.64 T, in the investigated doping concentration range, which is more than predicted by the theoretical calculations. The room temperature value of the damping parameter obtained from ferromagnetic resonance measurements, correcting for extrinsic contributions to the damping, is for the undoped sample 0.0027, which is close to the theoretically calculated Gilbert damping parameter. With 10 atomic percent Re doping, the damping parameter increases to 0.0090, which is in good agreement with the theoretical value of 0.0073. The increase in damping parameter with Re doping is explained by the increase in density of states at Fermi level, mostly contributed by the spin-up channel of Re. Moreover, both experimental and theoretical values for the damping parameter are observed to be weakly decreasing with decreasing temperature.

cond-mat.mtrl-sci↗

arXiv2019

Collective magnetization dynamics in nano-arrays of thin FePd discs

We report on the magnetization dynamics of a square array of mesoscopic discs, fabricated from an iron palladium alloy film. The dynamics properties were explored using ferromagnetic resonance measurements and micromagnetic simulations. The obtained spectra exhibit features resulting from the interactions between the discs, with a clear dependence on both temperature and the direction of the externally applied field. We demonstrate a qualitative agreement between the measured and calculated spectra. Furthermore, we calculated the mode profiles of the standing spin waves excited during a time-dependent magnetic field excitations. The resulting maps confirm that the features appearing in the ferromagnetic resonance absorption spectra originate from the temperature and directional dependent inter-disc interactions.

cond-mat.mes-hall↗

arXiv2018

Effect of in-situ electric field assisted growth on anti-phase boundaries in epitaxial Fe3O4 thin films on MgO

Anti-phase boundaries (APBs) normally form as a consequence of the initial growth conditions in all spinel ferrite thin films. The presence of APBs in epitaxial films of the inverse spinel Fe3O4 alters their electronic and magnetic properties due to strong antiferromagnetic (AF) interactions across these boundaries. The effect of using in-situ electric field assisted growth on the migration of APBs in hetero epitaxial Fe3O4(100)/MgO(100) thin films have been explored in the present work. The electric field assisted growth is found to reduce the AF interactions across APBs and as a consequence APBs free thin film like properties are obtained, which have been probed by electronic, magnetic and structural characterization. An increase in energy associated with the nucleation and/or early stage of the growth and, therefore, a corresponding increase in surface mobility of the ad-atoms play a critical role in controlling the density of APBs. This innovative technique can be employed to grow epitaxial spinel thin films with controlled AF interactions across APBs.

cond-mat.mtrl-sci↗

arXiv2017

Temperature-dependent Gilbert damping of Co2FeAl thin films with different degree of atomic order

Half-metallicity and low magnetic damping are perpetually sought for in spintronics materials and full Heusler alloys in this respect provide outstanding properties. However, it is challenging to obtain the well-ordered half-metallic phase in as-deposited full Heusler alloys thin films and theory has struggled to establish a fundamentals understanding of the temperature dependent Gilbert damping in these systems. Here we present a study of the temperature dependent Gilbert damping of differently ordered as-deposited Co2FeAl full Heusler alloy thin films. The sum of inter- and intraband electron scattering in conjunction with the finite electron lifetime in Bloch states govern the Gilbert damping for the well-ordered phase in contrast to the damping of partially-ordered and disordered phases which is governed by interband electronic scattering alone. These results, especially the ultralow room temperature intrinsic damping observed for the well-ordered phase provide new fundamental insights to the physical origin of the Gilbert damping in full Heusler alloy thin films.

cond-mat.mtrl-sci↗

arXiv2015

Tailoring the magnetodynamic properties of nanomagnets using magnetocrystalline and shape anisotropies

Magnetodynamical properties of nanomagnets are affected by the demagnetizing fields created by the same nanoelements. In addition, magnetocrystalline anisotropy produces an effective field that also contributes to the spin dynamics. In this article we show how the dimensions of magnetic elements can be used to balance crystalline and shape anisotropies, and that this can be used to tailor the magnetodynamic properties. We study ferromagnetic ellipses patterned from a 10 nm thick epitaxial Fe film with dimensions ranging from 50 x 150 nm to 150 x 450 nm. The study combines ferromagnetic resonance (FMR) spectroscopy with analytical calculations and micromagnetic simulations, and proves that the dynamical properties can be effectively controlled by changing the size of the nanomagnets. We also show how edge defects in the samples influence the magnetization dynamics. Dynamical edge modes localized along the sample edges are strongly influenced by edge defects, and this needs to be taken into account in understanding the full FMR spectrum

cond-mat.mes-hall↗