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arXiv · 2005.00929

BAlN for III-nitride UV light emitting diodes: undoped electron blocking layer

Wen Gu·Yi Lu·Rongyu Lin·Wenzhe Guo·Zi-Hui Zhang·Jae-Hyun Ryou·Jianchang Yan·Junxi Wang·Jinmin Li·Xiaohang Li
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Abstract

The undoped BAlN electron-blocking layer (EBL) is investigated to replace the conventional AlGaN EBL in light-emitting diodes (LEDs). Numerical studies of the impact of variously doped EBLs on the output characteristics of LEDs demonstrate that the LED performance shows heavy dependence on the p-doping level in the case of the AlGaN EBL, while it shows less dependence on the p-doping level for the BAlN EBL. As a result, we propose an undoped BAlN EBL for LEDs to avoid the p-doping issues, which a major technical challenge in the AlGaN EBL. Without doping, the proposed BAlN EBL structure still possesses a superior capacity in blocking electrons and improving hole injection compared with the AlGaN EBL having high doping. This study provides a feasible route to addressing electron leakage and insufficient hole injection issues when designing UV LED structures.

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Wen Gu, Yi Lu, Rongyu Lin, Wenzhe Guo, Zi-Hui Zhang, Jae-Hyun Ryou, Jianchang Yan, Junxi Wang, Jinmin Li, Xiaohang Li. 2020-05-02. BAlN for III-nitride UV light emitting diodes: undoped electron blocking layer. https://arxiv.org/abs/2005.00929

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