SearcharxivSearch

arXiv subjects

Jianchang Yan

Publications and source records attributed to Jianchang Yan.

13 recordsLinked to original sources

Overcoming sensitivity-bandwidth trade-off in mid-infrared spectroscopy by a microresonator-anchored swept laser

Optical frequency combs have revolutionized high-precision spectroscopy, yet an intrinsic trade-off between spectroscopic signal-to-noise ratio (sSNR) and measurement bandwidth ($B$) fundamentally constrains sensitive, broadband measurements. While broadband swept lasers offer a potential solution, generating broadband, ultrafast and linearly sweeping lasers with a narrow linewidth remains a significant challenge, particularly in the fingerprint mid-infrared (mid-IR) band. Here we overcome this limitation by using a microresonator-anchored ultrafast sweeping Fourier domain mode-locked (FDML) laser for mid-IR spectroscopy. We introduce a dual-microresonator-anchor approach: a microcomb provides frequency calibration and a high-Q microresonator resolves the instantaneous FDML lasing lineshape. The strategy enables accurate correction of the FDML laser's sweep nonlinearity and broad linewidth in the near-IR, allowing the FDML laser to function as a high-fidelity mid-IR light via difference frequency generation. The system achieves a record sSNR$\times$$B$ of 1.3$\times$10$^5$ THz$\cdot \sqrt{\rm Hz}$ and methane sensing precision of 9 ppb$\cdot$m$\cdot$$\sqrt{\rm s}$, while retaining GHz resolution to distinguish methane isotope. We further demonstrate broadband, coherent swept laser phase spectroscopy in the mid-IR, tolerating losses up to 78 dB. This work leverages advances in integrated photonics to overcome the fundamental limitations of precision spectroscopy, paving the way for next-generation, broadband, and ultra-sensitive mid-IR spectroscopic sensing systems.

physics.optics

High-Q AlN microresonators for nonlinear near-infrared and near-visible photonics

High Q-factors of microresonators are crucial for nonlinear integrated photonics, as many nonlinear dynamics have quadratic or even cubic dependence on Q-factors. The unique material properties make AlN microresonators invaluable for microcomb generation, Raman lasing and visible integrated photonics. However, the loss level of AlN falls behind other integrated platforms. By optimizing the fabrication, we demonstrate record Q-factors of 5.4$\times$10$^6$ and 2.2$\times$10$^6$ for AlN microresonators in the near-infrared and near-visible, respectively. Polarized-mode-interaction was used to create anomalous dispersion to support bright AlN Dirac solitons. Measurement of polarization-dependent spectra reveals the polarization hybridization of the Dirac soliton. In a microresonator with normal dispersion, Raman assisted four-wave-mixing (RFWM) was observed to initiate platicon formation, adding an approach to generate normal dispersion microcombs. A design of width-varying waveguides was used to ensure both efficient coupling and high Q-factor for racetrack microresonators at 780 nm. The microresonator was pumped to generate near-visble Raman laser at 820 nm with a fundamental linewidth narrower than 220 Hz. Our work unlocks new opportunities for integrated AlN photonics by improving Q-factors and uncovering nonlinear dynamics in AlN microresonators.

physics.optics

3D Heterogeneous Integration of Silicon Nitride and Aluminum Nitride on Sapphire toward Ultra-wideband Photonics Integrated Circuits

Extending two-dimensional photonic integrated circuits (PICs) to three-dimensional (3D) configurations promises great potential for scaling up integration, enhancing functionality, and improving performance of PICs. Silicon-based 3D PICs have made substantial progress due to CMOS compatibility. However, the narrow bandgap of silicon (1.1 eV) limits their use in short-wavelength applications, such as chemical and biological sensing, underwater optical communications, and optical atomic clocks. In this work, we developed a 3D photonics platform by heterogeneously integrating silicon nitride (SiN) and aluminum nitride (AlN) PICs on sapphire (Al$_2$O$_3$). The broadband transparency of these materials allow our platform to operate over a multi-octave wavelength ranging from ultraviolet to infrared. Leveraging this platform, we demonstrated efficient optical nonlinearity in an AlN microcavity, low-loss and tunable SiN waveguide-based optical components, and optical linking between AlN and SiN PICs layers in the visible and near-infrared spectrum, hinting at potential applications in integrated quantum systems. Our work presents an ultra-wideband 3D PICs platform, providing new opportunities for broadband and short-wavelength applications of PICs.

physics.optics

Self-injection locking dynamics with Raman actions in AlN microresonators

Self-injection locking (SIL) of semiconductor lasers to on-chip microcavities enables significant laser noise purification and diverse nonlinear optical actions. Realizing nonlinear SIL in new material platforms is essential for advancing photonic integrated circuits. Here, we demonstrate nonlinear SIL in AlN microcavities that generates stimulated Raman lasers (SRLs) and microcombs. We achieve SRL emission with an output power exceeding 10 mW and a fundamental linewidth below 70 Hz in the 1750 nm band. The Kerr effect further mediates stimulated emissions at the 2nd-Stokes and anti-Stokes frequencies. Multi-time-scale thermal relaxations during turnkey SIL enable GHz-level frequency sweeps of the SRL and pump. Raman actions also render a Stokes platicon microcomb state with co-emission in the pump and Stokes bands. Hybrid-integrated crystalline microresonators can be a versatile platform to investigate nonlinear photon-phonon interactions.

physics.optics

On-chip parallel processing of quantum frequency combs for high-dimensional hyper-entanglement generation

High-dimensional encoding and hyper-entanglement are unique features that distinguish optical photons from other quantum information carriers, leading to improved system efficiency and novel quantum functions. However, the disparate requirements to control different optical degrees of freedom have prevent the development of complete integrated platforms that is capable of leveraging the complementary benefits of high-dimensional encoding and hyper-entanglement at the same time. Here we demonstrate the chip-scale solution to the generation and manipulation of high-dimensional hyper-entanglement. This is achieved by the parallel processing of multiple quantum frequency combs in the path domain. Cavity-enhanced parametric down-conversion with Sagnac configuration is implemented to ensure the spectral indistinguishability. Simultaneous entanglement in path and frequency is realized with high dimensions. On-chip reconfiguration of the entanglement structure is also demonstrated. We further present quantum interference in both entanglement degrees of freedom with high visibility. Our work provides the critical step for the efficient and parallel processing of quantum information with integrated photonics.

quant-ph

Soliton dynamics in microresonators with XPM induced negative thermo-optic effect

Optical frequency comb generation in microresonators has attracted significant attention over the past decade, as it offers the promising potential for chip-scale optical frequency synthesis, optical clocks and precise optical spectroscopy. However, accessing temporal dissipative Kerr soliton (DKSs) is known to be severely hampered by thermal effects. Furthermore, due to the degeneracy of soliton existence range with respect to soliton number, deterministically accessing single soliton state is another challenge. Here, we demonstrate stable and deterministic single soliton generation in AlN-on-sapphire platform via auxiliary laser pumping scheme without the requirement of fast control of the pump power and detuning. Moreover, we reveal the underlying physics of soliton switching in a dual-pumped microcomb, which is fully described by the Lugiato - Lefever equation. The switching process is attributed to cross-phase modulation (XPM) induced degeneracy lifting of the soliton existence range, corresponding to an effective negative thermo-optic effect.

physics.optics

BAlN for III-nitride UV light emitting diodes: undoped electron blocking layer

The undoped BAlN electron-blocking layer (EBL) is investigated to replace the conventional AlGaN EBL in light-emitting diodes (LEDs). Numerical studies of the impact of variously doped EBLs on the output characteristics of LEDs demonstrate that the LED performance shows heavy dependence on the p-doping level in the case of the AlGaN EBL, while it shows less dependence on the p-doping level for the BAlN EBL. As a result, we propose an undoped BAlN EBL for LEDs to avoid the p-doping issues, which a major technical challenge in the AlGaN EBL. Without doping, the proposed BAlN EBL structure still possesses a superior capacity in blocking electrons and improving hole injection compared with the AlGaN EBL having high doping. This study provides a feasible route to addressing electron leakage and insufficient hole injection issues when designing UV LED structures.

physics.app-ph

Beyond 100 THz-spanning ultraviolet frequency combs in a non-centrosymmetric crystalline waveguide

Ultraviolet frequency combs enable applications ranging from precision spectroscopy to atomic clocks by addressing the electronic transitions of atoms and molecules. Access to ultraviolet light via integrated nonlinear optics is usually hampered by the strong material dispersion and large waveguide attention in the ultraviolet region. Here we demonstrate a simple route to chip-scale ultraviolet comb generators, simultaneously showing a gap-free frequency span of ~128 terahertz and supercontinuum sourced by an ultrafast fiber laser. The simultaneous cubic and quadratic nonlinear processes are implemented in single-crystalline aluminum nitride thin films, where a chirp-modulated taper waveguide is patterned to ensure a broad phase matching. The heterodyne beatnote characterization suggests that both the near-visible and ultraviolet supercontinuum combs maintain a high degree of coherence. Our approach is also adaptable to other non-centrosymmetric photonic platforms for ultrafast nonlinear optics with scalable bandwidth.

physics.optics

AlN/beta-Ga2O3 based HEMT: a potential pathway to ultimate high power device

Gallium Oxide (Ga2O3) has a huge potential on the power device for its high breakdown filed and good transport properties. beta-Ga2O3 as the thermodynamics stable phase, has been demonstrated to form high electron mobility transistor (HEMT) through delta-doping in the barrier due to its none-polar property. Following the development in III-V HEMT which turns from delta-doping-induced to polarization-induced 2DEG, an alternative method based on III-N materials/beta-Ga2O3 heterostructure is proposed that utilizing the polarization difference on the interface. Further requirements of electric field and conduction band difference show that only nitrogen (N)-polar AlN on beta-Ga2O3 can form the channel and hold large 2DEG concentration on the interface. Compared with conventional metal-polar AlN/GaN HEMT, the proposed N-polar AlN/beta-Ga2O3 HEMT show a much larger 2DEG concentration, the spontaneous-polarization-dominated electric field, better DC output performance, as well as higher breakdown voltage. This study provides a new research approach that shifting from delta-doping-induced to polarization-induced on beta-Ga2O3-based HEMT, which can also be a guideline for community excavating the application potential of Ga2O3.

physics.app-ph

17,000 %/W Second Harmonic Conversion Efficiency in Single Crystalline Aluminum Nitride Microresonators

High quality factor optical microcavities have been employed in a variety of material systems to enhance nonlinear optical interactions. While single-crystalline aluminum nitride microresonators have recently emerged as a low loss platform for integrated nonlinear optics such as four wave mixing and Raman lasing, few studies have investigated this material for second-harmonic generation. In this Letter, we demonstrate an optimized fabrication of dually-resonant phase-matched ring resonators from epitaxial aluminum nitride thin films. An unprecendented second-harmonic generation efficiency of 17,000%/W is obtained in the low power regime and pump depletion is observed at a relatively low input power of 3.5 mW. This poses epitaxial aluminum nitride as the highest efficiency second-harmonic generator among current integrated platforms.

physics.optics

Ultra-high-Q UV microring resonators based on single-crystalline AlN platform

Development of low-loss photonic components in the ultraviolet (UV) band will open new prospects for classical and quantum optics. Compared with other integrated platforms, aluminum nitride (AlN) is particularly attractive as it features an enormous bandgap of ~6.2 eV and intrinsic chi(2) and chi(3) susceptibilities. In this work, we demonstrate a record quality factor of 2.1 x 105 (optical loss ~ 8 dB/cm) at 390 nm based on single-crystalline AlN microrings. The low-loss AlN UV waveguide represents a significant milestone toward UV photonic integrated circuits as it features full compatibility for future incorporation of AlGaN-based UV emitters and receivers. On-chip UV spectroscopy, nonlinear optics and quantum information processing can also be envisioned.

physics.app-ph

Broadband frequency comb generation in aluminum nitride-on-sapphire microresonators

Development of chip-scale optical frequency comb with the coverage from ultra-violet (UV) to mid-infrared (MIR) wavelength is of great significance. To expand the comb spectrum into the challenging UV region, a material platform with high UV transparency is crucial. In this paper, crystalline aluminum nitride (AlN)-onsapphire film is demonstrated for efficient Kerr frequency comb generation. Near-infrared (NIR) comb with nearly octave-spanning coverage and low parametric threshold is achieved in continuous-wave pumped high-quality-factor AlN microring resonators. The competition between stimulated Raman scattering (SRS) and hyperparametric oscillation is investigated, along with broadband comb generation via Raman-assisted four-wave mixing (FWM). Thanks to its wide bandgap, excellent crystalline quality as well as intrinsic quadratic and cubic susceptibilities, AlN-on-sapphire platform should be appealing for integrated nonlinear optics from MIR to UV region.

physics.optics

Continuous-wave Raman Lasing in Aluminum Nitride Microresonators

We report the first investigation on continuous-wave Raman lasing in high-quality-factor aluminum nitride (AlN) microring resonators. Although wurtzite AlN is known to exhibit six Raman-active phonons, single-mode Raman lasing with low threshold and high slope efficiency is demonstrated. Selective excitation of A$_1^\mathrm{TO}$ and E$_2^\mathrm{high}$ phonons with Raman shifts of $\sim$612 and 660 cm$^{-1}$ is observed by adjusting the polarization of the pump light. A theoretical analysis of Raman scattering efficiency within ${c}$-plane (0001) of AlN is carried out to help account for the observed lasing behavior. Bidirectional lasing is experimentally confirmed as a result of symmetric Raman gain in micro-scale waveguides. Furthermore, second-order Raman lasing with unparalleled output power of $\sim$11.3 mW is obtained, which offers the capability to yield higher order Raman lasers for mid-infrared applications.

physics.optics