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arXiv · 2005.04359

Epitaxial Growth and Band Structure of Antiferromagnetic Mott Insulator CeOI

Xinqiang Cai·Zhilin Xu·Hui Zhou·Jun Ren·Na Li·Sheng Meng·Shuai-Hua Ji·Xi Chen
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Abstract

The van der Waals material CeOI is predicted to be a layered antiferromagnetic Mott insulator by DFT+U calculation. We successfully grow the CeOI films down to monolayer on graphene/6H-SiC(0001) substrate by using molecular beam epitaxy. Films are studied by {\it in-situ} scanning tunneling microscopy and spectroscopy, which shows a band gap of 4.4 eV. A metallic phase with composition unidentified also exists. This rare earth oxyhalide adds a new member to the two-dimensional magnetic materials.

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Xinqiang Cai, Zhilin Xu, Hui Zhou, Jun Ren, Na Li, Sheng Meng, Shuai-Hua Ji, Xi Chen. 2020-05-09. Epitaxial Growth and Band Structure of Antiferromagnetic Mott Insulator CeOI. https://arxiv.org/abs/2005.04359

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