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arXiv · 2005.04926

Orthogonal electric control of the out-of-plane field-effect in two-dimensional ferroelectric alpha-In2Se3

Yue Li·Chen Chen·Wei Li·Xiaoyu Mao·Heng Liu·Jianyong Xiang·Anmin Nie·Zhongyuan Liu·Wenguang Zhu·Hualing Zeng
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Abstract

Tuning the electric properties of crystalline solids is at the heart of material science and electronics. Generating the electric field-effect via an external voltage is a clean, continuous and systematic method. Here, utilizing the unique electric dipole locking in van der Waals (vdW) ferroelectric alpha-In2Se3, we report a new approach to establish the electric gating effect, where the electrostatic doping in the out-of-plane direction is induced and controlled by an in-plane voltage. With the vertical vdW heterostructure of ultrathin alpha-In2Se3 and MoS2, we validate an in-plane voltage gated coplanar field-effect transistor (CP-FET) with distinguished and retentive on/off ratio. Our results demonstrate unprecedented electric control of ferroelectricity, which paves the way for integrating two-dimensional (2D) ferroelectric into novel nanoelectronic devices with broad applications.

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Yue Li, Chen Chen, Wei Li, Xiaoyu Mao, Heng Liu, Jianyong Xiang, Anmin Nie, Zhongyuan Liu, Wenguang Zhu, Hualing Zeng. 2020-05-11. Orthogonal electric control of the out-of-plane field-effect in two-dimensional ferroelectric alpha-In2Se3. https://arxiv.org/abs/2005.04926

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