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arXiv · 2005.13786

Nanosecond dynamics in intrinsic topological insulator $\text{Bi}_{2-x}\text{Sb}_x\text{Se}_3$ revealed by time-resolved optical reflectivity

Adam L. Gross·Yasen Hou·Antonio Rossi·Dong Yu·Inna M. Vishik
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Abstract

$\text{Bi}_2\text{Se}_3$ is an ideal three-dimensional topological insulator in which the chemical potential can be brought into the bulk band gap with antimony doping. Here, we utilize ultrafast time-resolved transient reflectivity to characterize the photoexcited carrier decay in $\text{Bi}_{2-x}\text{Sb}_x\text{Se}_3$ nanoplatelets. We report a substantial slowing of the bulk carrier relaxation time in bulk-insulating $\text{Bi}_{2-x}\text{Sb}_x\text{Se}_3$ nanoplatelets as compared to $n$-type bulk-metallic $\text{Bi}_2\text{Se}_3$ at low temperatures, which approaches $3.3 \text{ ns}$ in the zero pump fluence limit. This long-lived decay is correlated across different fluences and antimony concentrations, revealing unique decay dynamics not present in $n$-type $\text{Bi}_2\text{Se}_3$, namely the slow bimolecular recombination of bulk carriers.

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Adam L. Gross, Yasen Hou, Antonio Rossi, Dong Yu, Inna M. Vishik. 2020-05-28. Nanosecond dynamics in intrinsic topological insulator $\text{Bi}_{2-x}\text{Sb}_x\text{Se}_3$ revealed by time-resolved optical reflectivity. https://doi.org/10.1103/physrevb.103.l020301

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