arXiv subjects

Yasen Hou

Publications and source records attributed to Yasen Hou.

17 recordsLinked to original sources

arXiv2026

Vortex Transport in Ni/Bi Bilayer Superconductor with Strong Spin-Orbit and Exchange Interaction

Nickel/bismuth (Ni/Bi) bilayers are a promising platform for exploring unconventional superconductivity. Ferromagnetic Ni is coupled to Bi, a strong spin orbit metal that only becomes superconducting below approx 10 mK, forming a bilayer exhibits superconductivity at a much higher temperatures, a Tc of 3 to 4 K. Such a bilayer thus makes an ideal system to probe Cooper pairing in strong spin orbit coupled magnetic environments. Magneto transport studies near Tc reveal the behavior of vortex dynamics and exchange proximity effects. It is seen that isolated vortices of the bilayers respond sensitively to out of plane fields, producing antisymmetric transverse resistance peaks attributable to competing Magnus and viscous forces. Control experiments using a ferromagnetic insulator confirm that superconductivity extends throughout the bilayer, not just confined at the interface. Overall, the results provide a unified picture of transport dominated by vortex dynamics and show that a conventional s wave order parameter accounts for the observations, with any likely unconventional contributions being only subtle.

cond-mat.supr-con↗

arXiv2026

Proximity Magnetism in Mn(Bi,Sb)2Te4-(Bi,Sb)2Te3/MnTe Natural Heterostructures

Magnetic topological insulators and their heterostructures provide great opportunities in coupling band topology with nontrivial spin configuration for enhanced spintronic device performance as well as designing totally new magnetoelectric systems and functionalities. We find that Mn interdiffusion from MnTe when interfaced with (Bi,Sb)2Te3 stabilizes as self-organized Mn(Bi,Sb)2Te4 septuple lamellae amongst alternating (Bi,Sb)2Te3 quintuple layers, as observed using scanning transmission electron microscopy and depth-sensitive polarized neutron reflectometry. We further demonstrate a valuable combination of magnetic and topological orders in these naturally formed Mn(Bi,Sb)2Te4-(Bi,Sb)2Te3 heterostructures that are exchange coupled with MnTe. Magnetotransport experiments and quantum magnetism simulations reveal that, above its own Neel temperature TN of 20 K, Mn(Bi,Sb)2Te4 mediates the exchange field leading to an anomalous Hall effect at the (Bi,Sb)2Te3/MnTe interface, with an enhanced interfacial TN exceeding 200 K. This novel magnetic interface in turn allows a robust and deterministic spin-orbit torque switching without an external magnetic field at a low critical current density of 300 kA cm-2. The antiferromagnetically coupled architecture of Mn(Bi,Sb)2Te4-(Bi,Sb)2Te3/MnTe, featuring unique magnetic and topological proximity effects across a chalcogenide backbone, is rich in fundamental interface physics and holds potential for practical applications in spintronics.

cond-mat.mtrl-sci↗

arXiv2026

Magnetic exchange coupled nonreciprocal devices for cryogenic memory

As computing power demands continue to grow, superconducting electronics present an opportunity to reduce power consumption by increasing the energy efficiency of digital logic and memory. A key milestone for scaling this technology is the development of efficient superconducting memories. Such devices should be nonvolatile, scalable to high integration density and memory capacity, enable fast and low-power reading and writing operations, and be compatible with the digital logic. We present a versatile device platform to develop such nonvolatile memory devices consisting of an exchange-coupled ultra-thin superconductor encapsulated between two ferromagnetic insulators (FIs). The superconducting exchange coupling, which is tuneable by the relative alignment between the FI magnetizations, enables the switching of superconductivity on and off. We exploit this mechanism to create a superconducting nonvolatile memory where single-cell writing is realized using heat-assisted magnetic recording, and explain how it can become a contender for state-of-the-art superconducting memories. Furthermore, below their critical temperatures, the memory elements show a marked nonreciprocity, with zero magnetic field superconducting diode efficiencies exceeding $\pm$60%, showing the versatility of the proposed devices for superconducting computing.

cond-mat.supr-con↗

arXiv2025

Nonreciprocity of supercurrent along applied magnetic field

Nonreciprocal current responses arise in a broad range of systems, from magnons and phonons to supercurrents, due to an interplay between spatial and temporal symmetry breakings. These find applications in devices, such as circulators and rectifiers, as well as in probing the interactions and states that underlie the nonreciprocity. An established symmetry argument anticipates emergence of nonreciprocal currents along a direction perpendicular to the applied magnetic field that breaks the time-reversal symmetry. Here, motivated by recent experiments, we examine the emergence of nonreciprocity in vortex-limited superconducting critical currents along an applied magnetic field. Employing London's equations for describing the Meissner response of a superconducting film, we find that an additional symmetry breaking due to a preferred vortex axis enables nonreciprocal critical currents along the applied magnetic field, consistent with the so far unexplained experimental observation. Building on our concrete theoretical model for supercurrents, we discuss a possible generalization of the prevailing symmetry consideration to encompass nonreciprocal currents along the time-reversal symmetry breaking direction.

cond-mat.supr-con↗

arXiv2024

Signatures of a Spin-Active Interface and Locally Enhanced Zeeman field in a Superconductor-Chiral Material Heterostructure

A localized Zeeman field, intensified at heterostructure interfaces, could play a crucial role in a broad area including spintronics and unconventional superconductors. Conventionally, the generation of a local Zeeman field is achieved through magnetic exchange coupling with a magnetic material. However, magnetic elements often introduce defects, which could weaken or destroy superconductivity. Alternatively, the coupling between a superconductor with strong spin-orbit coupling and a non-magnetic chiral material could serve as a promising approach to generate a spin active interface. In this study, we leverage an interface superconductor, namely induced superconductivity in noble metal surface states, to probe the spin active interface. Our results unveil an enhanced interface Zeeman field, which selectively closes the surface superconducting gap while preserving the bulk superconducting pairing. The chiral material, i.e. trigonal tellurium, also induces Andreev bound states (ABS) exhibiting spin polarization. The field dependence of ABS manifests a substantially enhanced interface Landé g-factor (g_eff ~ 12), thereby corroborating the enhanced interface Zeeman energy.

cond-mat.supr-con↗

arXiv2024

Highly Efficient Superconducting Diodes and Rectifiers for Quantum Circuitry

Superconducting electronics is essential for energy-efficient quantum and classical high-end computing applications. Towards this goal, non-reciprocal superconducting circuit elements, such as superconducting diodes (SDs) can fulfill many critical needs. SDs have been the subject of multiple studies, but integrating several SDs in a superconducting circuit remains a challenge. Here we implement the first SD bridge with multiple SDs exhibiting reproducible characteristics operating at temperatures of a few Kelvin. We demonstrate its functionality as a full wave rectifier using elemental superconductors and insulating ferromagnets, with efficiency up to 43%, and ac to dc signal conversion capabilities at frequencies up to 40 kHz. Our results show a pathway with a highly scalable thin film platform for nonreciprocal superconducting circuits. They could significantly reduce energy consumption as well as decohering thermal and electromagnetic noise in quantum computing.

cond-mat.supr-con↗

arXiv2023

Spin Splitting Tunable Optical Bandgap in GdN Thin Films for Spin Filtering

Rare-earth nitrides, such as gadolinium nitride (GdN), have great potential for spintronic devices due to their unique magnetic and electronic properties. GdN has a large magnetic moment, low coercitivity and strong spin polarization suitable for spin transistors, magnetic memories and spin-based quantum computing devices. Its large spin splitting of the optical bandgap functions as a spin-filter that offers the means for spin-polarized current injection into metals, superconductors, topological insulators, 2D layers and other novel materials. As spintronics devices require thin films, a successful implementation of GdN demands a detailed investigation of the optical and magnetic properties in very thin films. With this objective, we investigate the dependence of the direct and indirect optical bandgaps (Eg) of half-metallic GdN, using the trilayer structure AlN(10 nm)/GdN(t)/AlN(10 nm) for GdN film thickness t in the ranging from 6 nm to 350 nm, in both paramagnetic (PM) and ferromagnetic (FM) phases. Our results show a bandgap of 1.6 eV in the PM state, while in the FM state the bandgap splits for the majority (0.8 eV) and minority (1.2 eV) spin states. As the GdN film becomes thinner the spin split magnitude increases by 60%, going from 0.290 eV to 0.460 eV. Our results point to methods for engineering GdN films for spintronic devices.

cond-mat.mtrl-sci↗

arXiv2023

Ubiquitous Superconducting Diode Effect in Superconductor Thin Films

The macroscopic coherence in superconductors supports dissipationless supercurrents which could play a central role in emerging quantum technologies. Accomplishing unequal supercurrents in the forward and backward directions would enable unprecedented functionalities. This nonreciprocity of critical supercurrents is called superconducting (SC) diode effect. We demonstrate strong SC diode effect in conventional SC thin films, such as niobium and vanadium, employing external magnetic fields as small as 1 Oe. Interfacing the SC layer with a ferromagnetic semiconductor EuS, we further accomplish non-volatile SC diode effect reaching a giant efficiency of 65%. By careful control experiments and theoretical modeling, we demonstrate that the critical supercurrent nonreciprocity in SC thin films could be easily accomplished with asymmetrical vortex edge/surface barriers and the universal Meissner screening current governing the critical currents. Our engineering of the SC diode effect in simple systems opens door for novel technologies. Meanwhile, we reveal the ubiquity of Meissner screening effect induced SC diode effect in superconducting films, which should be eliminated with great care in the search of exotic superconducting states harboring finite-momentum Cooper pairing.

cond-mat.supr-con↗

arXiv2022

A van der Waals Interface Hosting Two Groups of Magnetic Skyrmions

Multiple magnetic skyrmion phases add an additional degree of freedom for skyrmion based ultrahigh-density spin memory devices. Extending the field to two-dimensional van der Waals magnets is a rewarding challenge, where the realizable degree of freedoms (e.g. thickness, twisting angle and electrical gating) and high skyrmion density result in intriguing new properties and enhanced functionality. We report a van der Waals interface, formed by two 2D ferromagnets Cr2Ge2Te6 and Fe3GeTe2 with a Curie temperature of ~65 K and ~205 K, respectively, hosting two groups of magnetic skyrmions. Two sets of topological Hall effect are observed below 60 K when Cr2Ge2Te6 is magnetically ordered. These two groups of skyrmions are directly imaged using magnetic force microscopy. Interestingly, the magnetic skyrmions persist in the heterostructure in the remanent state with zero applied magnetic field. Our results are promising for the realization of skyrmionic devices based on van der Waals heterostructures hosting multiple skyrmion phases.

cond-mat.mes-hall↗

arXiv2021

Multiple Andreev reflections in topological insulator nanoribbons

Superconducting proximity junctions made of topological insulator (TI) nanoribbons (NRs) provide a useful platform for studying topological superconductivity. We report on the fabrication and measurement of Josephson junctions (JJs) using Sb doped Bi$_2$Se$_3$ NRs in contact with Al electrodes. Aharonov$-$Bohm and Altshuler$-$Aronov$-$Spivak oscillations of the axial magneto-conductance of TI NR were observed, indicating the existence of metallic surface states along the circumference of the TI NR. We observed the supercurrent in the TI NR JJ and subharmonic gap structures of the differential conductance due to multiple Andreev reflections. The interface transparency of the TI NR JJs estimated based on the excess current reaches $τ$ = 0.83, which is among the highest values reported for TI JJs. The temperature dependence of critical current is consistent with the short and ballistic junction model confirming the formation of highly transparent superconducting contacts on the TI NR. Our observations would be useful for exploring topological Josephson effects in TI NRs.

cond-mat.mes-hall↗

arXiv2021

Nanosecond dynamics in intrinsic topological insulator $\text{Bi}_{2-x}\text{Sb}_x\text{Se}_3$ revealed by time-resolved optical reflectivity

$\text{Bi}_2\text{Se}_3$ is an ideal three-dimensional topological insulator in which the chemical potential can be brought into the bulk band gap with antimony doping. Here, we utilize ultrafast time-resolved transient reflectivity to characterize the photoexcited carrier decay in $\text{Bi}_{2-x}\text{Sb}_x\text{Se}_3$ nanoplatelets. We report a substantial slowing of the bulk carrier relaxation time in bulk-insulating $\text{Bi}_{2-x}\text{Sb}_x\text{Se}_3$ nanoplatelets as compared to $n$-type bulk-metallic $\text{Bi}_2\text{Se}_3$ at low temperatures, which approaches $3.3 \text{ ns}$ in the zero pump fluence limit. This long-lived decay is correlated across different fluences and antimony concentrations, revealing unique decay dynamics not present in $n$-type $\text{Bi}_2\text{Se}_3$, namely the slow bimolecular recombination of bulk carriers.

cond-mat.mes-hall↗

arXiv2020

Gate-Modulated Quantum Interference Oscillations in Sb-Doped Bi2Se3 Topological Insulator Nanoribbon

Topological insulator nanoribbons (TI NRs) provide a useful platform to explore the phase-coherent quantum electronic transport of topological surface states, which is crucial for the development of topological quantum devices. When applied with an axial magnetic field, the TI NR exhibits magnetoconductance (MC) oscillations with a flux period of h/e, i.e., Aharonov-Bohm (AB) oscillations, and h/2e, i.e., Altshuler-Aronov-Spivak (AAS) oscillations. Herein, we present an extensive study of the AB and AAS oscillations in Sb doped Bi$_2$Se$_3$ TI NR as a function of the gate voltage, revealing phase-alternating topological AB oscillations. Moreover, the ensemble-averaged fast Fourier transform analysis on the Vg dependent MC curves indicates the suppression of the quantum interference oscillation amplitudes near the Dirac point, which is attributed to the suppression of the phase coherence length within the low carrier density region. The weak antilocalization analysis on the perpendicular MC curves confirms the idea of the suppressed coherence length near the Dirac point in the TI NR.

cond-mat.mes-hall↗

arXiv2020

Adjustable quantum interference oscillations in Sb-doped Bi2Se3 topological insulator nanoribbons

Topological insulator (TI) nanoribbons (NRs) provide a unique platform for investigating quantum interference oscillations combined with topological surface states. One-dimensional subbands formed along the perimeter of a TI NR can be modulated by an axial magnetic field, exhibiting Aharonov-Bohm (AB) and Altshuler-Aronov-Spivak (AAS) oscillations of magnetoconductance (MC). Using Sb-doped Bi2Se3 TI NRs, we found that the relative amplitudes of the two quantum oscillations can be tuned by varying the channel length, exhibiting crossover from quasi-ballistic to diffusive transport regimes. The AB and AAS oscillations were discernible even for a 70 micrometer long channel, while only the AB oscillations were observed for a short channel. Analyses based on ensemble-averaged fast Fourier transform of MC curves revealed exponential temperature dependences of the AB and AAS oscillations, from which the circumferential phase-coherence length and thermal length were obtained. Our observations indicate that the channel length in a TI NR can be a useful control knob for tailored quantum interference oscillations, especially for developing topological hybrid quantum devices.

cond-mat.mes-hall↗

arXiv2020

Non-local Chemical Potential Modulation in Topological Insulators Via Electric Field Driven Trapped Charge Migration

Topological insulators (TIs) host unusual surface states with Dirac dispersion and helical spin texture and hold high potentials for novel applications in spintronics and quantum computing. Control of the chemical potential in these materials is challenging but crucial to realizing the hotly pursued exotic physics, including efficient spin generation1,2, Majorana Fermions3-5, and exciton condensation6,7. Here we report a simple and effective method that can in-situ tune the chemical potential of single-crystal Bi2-xSbxSe3 nanoribbons, with a magnitude significantly larger than traditional electrostatic gating. An electric field parallel to a device channel can shift the chemical potential across the Dirac point, both inside and outside the channel. We attribute this non-local reversible modulation of chemical potential to electric-field-induced charge hopping among defect states, further supported by photocurrent mapping. Our approach enables engineering chemical potential distributions in TIs and opens up tremendous opportunities for investigating fundamental transport mechanisms of charge and composite particles in these materials.

cond-mat.mes-hall↗

arXiv2020

Superconducting Quantum Interference Devices Made of Sb-doped Bi2Se3 Topological Insulator Nanoribbons

We report the fabrication and characterization of superconducting quantum interference devices (SQUIDs) made of Sb-doped Bi2Se3 topological insulator (TI) nanoribbon (NR) contacted with PbIn superconducting electrodes. When an external magnetic field was applied along the NR axis, the TI NR exhibited periodic magneto-conductance oscillations, the so-called Aharonov-Bohm oscillations, owing to one-dimensional subbands. Below the superconducting transition temperature of PbIn electrodes, we observed supercurrent flow through TI NR-based SQUID. The critical current periodically modulates with a magnetic field perpendicular to the SQUID loop, revealing that the periodicity corresponds to the superconducting flux quantum. Our experimental observations can be useful to explore Majorana bound states (MBS) in TI NR, promising for developing topological quantum information devices.

cond-mat.mes-hall↗

arXiv2019

Nanomechanical characterization of quantum interference in a topological insulator nanowire

The discovery of two-dimensional gapless Dirac fermions in graphene and topological insulators (TI) has sparked extensive ongoing research toward applications of their unique electronic properties. The gapless surface states in three-dimensional insulators indicate a distinct topological phase of matter with a non-trivial Z2 invariant that can be verified by angle-resolved photoemission spectroscopy or magnetoresistance quantum oscillation. In TI nanowires, the gapless surface states exhibit Aharonov-Bohm (AB) oscillations in conductance, with this quantum interference effect accompanying a change in the number of transverse one-dimensional modes in transport. Thus, while the density of states (DOS) of such nanowires is expected to show such AB oscillation, this effect has yet to be observed. Here, we adopt nanomechanical measurements that reveal AB oscillations in the DOS of a topological insulator. The TI nanowire under study is an electromechanical resonator embedded in an electrical circuit, and quantum capacitance effects from DOS oscillation modulate the circuit capacitance thereby altering the spring constant to generate mechanical resonant frequency shifts. Detection of the quantum capacitance effects from surface-state DOS is facilitated by the small effective capacitances and high quality factors of nanomechanical resonators, and as such the present technique could be extended to study diverse quantum materials at nanoscale.

cond-mat.mes-hall↗

arXiv2018

Emergence of excitonic superfluid at topological-insulator surfaces

Excitons are spin integer particles that are predicted to condense into a coherent quantum state at sufficiently low temperature, and exciton condensates can be realized at much higher temperature than condensates of atoms because of strong Coulomb binding and small mass. Signatures of exciton condensation have been reported in double quantum wells1-4, microcavities5, graphene6, and transition metal dichalcogenides7. Nonetheless, transport of exciton condensates is not yet understood and it is unclear whether an exciton condensate is a superfluid8,9 or an insulating electronic crystal10,11. Topological insulators (TIs) with massless particles and unique spin textures12 have been theoretically predicted13 as a promising platform for achieving exciton condensation. Here we report experimental evidence of excitonic superfluid phase on the surface of three-dimensional (3D) TIs. We unambiguously confirmed that electrons and holes are paired into charge neutral bound states by the electric field independent photocurrent distributions. And we observed a millimetre-long transport distance of these excitons up to 40 K, which strongly suggests dissipationless propagation. The robust macroscopic quantum states achieved with simple device architecture and broadband photoexcitation at relatively high temperature are expected to find novel applications in quantum computations and spintronics.

cond-mat.mes-hall↗