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arXiv · 2006.02090

Transport properties of a GaAs/InGaAs/GaAs quantum well: temperature, magnetic field and many-body effects

Truong Van Tuan·Nguyen Quoc Khanh·Vo Van Tai·Dang Khanh Linh
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Abstract

We investigate the zero and finite temperature transport properties of a quasi-two-dimensional electron gas in a GaAs/InGaAs/GaAs quantum well under a magnetic field, taking into account many-body effects via a local-field correction. We consider the surface roughness, roughness-induced piezoelectric, remote charged impurity and homogeneous background charged impurity scattering. The effects of the quantum well width, carrier density, temperature and local-field correction on resistance ratio are investigated. We also consider the dependence of the total mobility on the multiple scattering effect.

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Truong Van Tuan, Nguyen Quoc Khanh, Vo Van Tai, Dang Khanh Linh. 2020-06-03. Transport properties of a GaAs/InGaAs/GaAs quantum well: temperature, magnetic field and many-body effects. https://arxiv.org/abs/2006.02090

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