arXiv subjects

Nguyen Quoc Khanh

Publications and source records attributed to Nguyen Quoc Khanh.

15 recordsLinked to original sources

arXiv2026

From Denoising to Decision Making: A Survey on Diffusion Model-Enabled Deep Reinforcement Learning for Wireless Networks

Deep reinforcement learning (DRL) has long been a promising solution for sequential resource management in wireless networks. However, conventional DRL methods are fundamentally limited by their reliance on unimodal policy distributions, inefficient exploration in high-dimensional action spaces, and poor adaptability to dynamic and heterogeneous environments. Meanwhile, diffusion models (DMs) as one of the most powerful families of generative AI have demonstrted remarkable capabilities in modeling complex, multi-modal data distributions across diverse domains. The integration of DMs and DRL has opened a new and rapidly growing research direction, in which DM-enabled policies substantially enhance decision quality by capturing the complex, discontinuous, and multimodal action structures inherent in wireless resource management. In this paper, we present a comprehensive survey of DM-enabled DRL algorithms and their applications for various issues in wireless networks. Particularly, we first provide the theoretical background of DM and present different DM-enabled DRL algorithms. We then systematically review applications of DM-enabled DRL for across computation offloading in mobile edge computing, UAV-assisted, vehicular, and AIGC-driven systems, as well as wireless resource allocation, physical-layer security, and robotics and UAV planning. We conclude the paper by higlight future research directions.

eess.SP↗

arXiv2026

Transformer-Enhanced Reinforcement Learning: Fundamentals and Applications in Communication Networks

Reinforcement Learning (RL) has long been a powerful solution to various problems in communication networks. However, traditional RL models still face with several limitations. Not only do they rely on large numbers of interactions with the environment, but they are also limited in terms of modeling long-term relationships and tackling partial observability. In recent years, the Transformer model has demonstrated the ability to enhance RL models, allowing them to overcome these issues. Particularly, the self-attention mechanism within the Transformer enables efficient modeling of long-range dependencies and global correlations, as well as accelerates training processes and handles heterogeneous data modalities. In this paper, we present a comprehensive survey of Transformer-based RL algorithms and their applications in communication networks. Specifically, the paper provides the mathematical background of RL and Transformer architectures, along with insights into key issues such as resource allocation, computation offloading, routing, and trajectory control, and network security. We conclude the paper by discussing challenges, open issues, and notable future research directions, including Transformer-enhanced DRL algorithms for semantic communication and network optimization.

eess.SP↗

arXiv2025

Effect of screening on Seebeck coefficient in bilayer graphene/AlGaAs electron gas

The knowledge of Seebeck coefficient is a key factor in optimization of thermoelectric materials and finding right applications for it. A high sensitivity to structural change makes thermopower measurements an excellent technique for the study on the charge transport properties of a given material. The phonondrag term dominates at low temperature in the Seebeck coefficient This study examines the temperaturedependent screening effect on the phonondraginduced Seebeck coefficient S^g in a bilayer graphene- BLG-AlGaAs-quasi-twodimensional electron gas (q2DEG) system at the temperature below 50 K. The BLG layer interacts with both deformation potential acoustic phonons and stronger piezoelectric field acoustic phonons from AlGaAs/GaAs. We compare the electronphonon interactions in BLG with and without screening by q2DEG. The screening effect reduces particularly at low temperatures and shows a strong dependence on the carrier density in the BLG layer. The doublelayer screening function increases with layer separation d paralleling the monolayer screening at large d. Additionally varying the GaAs quantum well width reveals that increases with width less than 100 Åunder doublelayer screening but remains unchanged beyond this threshold while monolayer screening decreases as the width increases. Both screening functions enhance when the BLG carrier density is lower than that of q2DEG though the magnitude difference between them is minimal

cond-mat.mes-hall↗

arXiv2023

Disorder and cavity evolution in single-crystalline Ge during implantation of Sb ions monitored in-situ by spectroscopic ellipsometry

Ion implantation has been a key technology for the controlled surface modification of materials in microelectronics and generally, for tribology, biocompatibility, corrosion resistance and many more. To form shallow junctions in Ge is a challenging task. In this work the formation and accumulation of shallow damage profiles was studied by in-situ spectroscopic ellipsometry (SE) for the accurate tracking and evaluation of void and damage fractions in crystalline Ge during implantation of 200-keV Sb ions with a total fluence up to 1E16 cm-2 and an ion flux of 2.1E12 cm-2 s-1. The consecutive stages of damage accumulation were identified using optical multi-layer models with quantitative parameters of the thickness of modified layers as well as the volume fractions of amorphized material and voids. The effective size of damaged zones formed from ion tracks initiated by individual bombarding ions can be estimated by numerical simulation compared with the dynamics of damage profiles measured by ion beam analysis and ellipsometry. According to our observations, the formation of initial partial disorder was followed by complete amorphization and void formation occurring at the fluence of about 1E15 cm-2, leading to a high volume fraction of voids and a modified layer thickness of approx. 200 nm by the end of the irradiation process. This agrees with the results of numerical simulations and complementary scanning electron microscopy (SEM) measurements. In addition, we found a quasi-periodic time dependent behavior of amorphization and void formation represented by alternating accelerations and decelerations of different reorganization processes, respectively.

cond-mat.mtrl-sci↗

arXiv2020

Collective excitations in biased bilayer graphene: Temperature effects

We have studied the temperature effect on collective excitations in biased bilayer graphene within random-phase approximation. From the zeros of temperature dynamical dielectric function of the system we have found one weakly damped plasmon mode. For a given electrostatic potential bias, at low (high) temperature T the plasmon frequency changes slightly (increases remarkably) with T. We have also studied the effects of potential bias and carrier density on the plasmon frequency of the system at finite temperatures.

cond-mat.mes-hall↗

arXiv2020

Collective excitations in spin-polarized bilayer graphene

We calculate the plasmon frequency and damping rate of plasma oscillations in a spin-polarized BLG system. Using the long wavelength approximation for dynamical dielectric function, we obtain an analytical expression for plasmon frequency showing that the degree of spin polarization P has negligible effect on the long wavelength plasmon frequency. Numerical calculations demonstrate that the degree of spin polarization affects slightly (strongly) plasmon frequency at small (large) wave-vectors and the maximum value of damping rate increases with increasing P. We also study the effects of carrier density and substrate dielectric constant on plasmon properties for different value of spin polarization. The numerically calculated critical wave-vector, at which the plasmon dispersion curve hits the edge of electron-hole continuum, decreases with P and can be used to determine experimentally the degree of spin polarization.

cond-mat.mes-hall↗

arXiv2020

Plasmon modes in double-layer biased bilayer graphene

We investigate zero-temperature plasmon modes in a double-layer bilayer graphene structure under a perpendicular electrostatic bias. The numerical results demonstrate that there exist two collective modes which are undamped in the long wavelength limit. The finite potential bias decreases remarkably the plasmon energy in a wide range of wave-vector and makes plasmon branches become Landau damped at a higher wave-vector as compared to unbiased case. We find that the dependence of plasmon dispersions on the system parameters such as the inter-layer separation and carrier density is similar in two cases with and without electrostatic bias.

cond-mat.mes-hall↗

arXiv2020

Transport properties of a GaAs/InGaAs/GaAs quantum well: temperature, magnetic field and many-body effects

We investigate the zero and finite temperature transport properties of a quasi-two-dimensional electron gas in a GaAs/InGaAs/GaAs quantum well under a magnetic field, taking into account many-body effects via a local-field correction. We consider the surface roughness, roughness-induced piezoelectric, remote charged impurity and homogeneous background charged impurity scattering. The effects of the quantum well width, carrier density, temperature and local-field correction on resistance ratio are investigated. We also consider the dependence of the total mobility on the multiple scattering effect.

cond-mat.mes-hall↗

arXiv2020

Charged impurity scattering in bilayer-graphene double layers

We consider a double-layer system made of two parallel bilayer graphene sheets separated by a dielectric medium. We calculate the finite-temperature electrical conductivity of the first layer due to charged impurities located in two layers. We study the effects of temperature, interlayer distance, dielectric constants and impurity concentration, carrier concentration on the electrical conductivity. We show the importance of charged impurities located in layer II in determining electrical conductivity of the first layer for small interlayer distance. The results in this paper give us more understanding about the long-range charged impurity scattering in bilayer graphene under effect of the second one.

cond-mat.mes-hall↗

arXiv2017

Plasmon modes in bilayer-monolayer graphene heterostructures

We investigate the dispersion relation and damping of plasmon modes in a bilayer-monolayer graphene heterostructure with carrier densities and at zero temperature within the random-phase-approximation taking into account the nonhomogeneity of the dielectric background of the system. We derive analytical expressions for plasmon frequencies by using long wavelength expansion of response and bare Coulomb interaction functions. We show that optical plasmon dispersion curve of the bilayer-monolayer system lies slightly below that of double-layer graphene (DLG) and the acoustic one lies much lower than that of DLG. We find that while decay rates of acoustic modes of the system and DLG are remarkably different, those of optical modes in both double-layer systems are similar. Except the damping rate of acoustic mode, properties of plasmon excitations in considered system depend remarkably on the interlayer distance, inhomogeneity of the background, density ratio and spacer dielectric constant, especially at large wave-vectors.

cond-mat.mes-hall↗

arXiv2017

Plasmon modes in graphene-GaAs heterostructures

We investigate the plasmon dispersion relation and damping rate of collective excitations in a double-layer system consisting of bilayer graphene and GaAs quantum well, separated by a distance, at zero temperature with no interlayer tunneling. We use the random-phase-approximation dielectric function and take into account the nonhomogeneity of the dielectric background of the system. We show that the plasmon frequencies and damping rates depend considerably on interlayer correlation parameters, electron densities and dielectric constants of the contacting media.

cond-mat.mes-hall↗

arXiv2011

Plasmon modes of double-layer graphene at finite temperature

We calculate the dynamical dielectric function of doped double-layer graphene (DLG), made of two parallel graphene monolayers with carrier densities n 1, n2, respectively, and an interlayer separation of d at finite temperature. The results are used to find the dispersion of plasmon modes and loss functions of DLG for several interlayer separations and layer densities. We show that in the case of n 2=0, the temperature plasmon modes are dramatically different from the zero temperature ones.

cond-mat.mtrl-sci↗

arXiv2007

Correlations in 2D electron gas at arbitrary temperature and spin polarizations

Using the Singwi-Tosi-Land-Sjolander theory we have studied the many-body effects in the two-dimensional electron gas with arbitrary polarization at finite temperatures. We have calculated the structure factors, pair correlation functions, local-field factors and the Helmholtz free energy for different values of spin polarization, temperature and density parameter. We have shown that the spin polarization and finite temperature effects are remarkable and in the low temperature or paramagnetic case our results match closely with those obtained in earlier papers .

cond-mat.mes-hall↗

arXiv2005

Electron and Spin Correlations in Semiconductor Heterostructures: Quantum Singwi-Tosi-Land-Sjolander Theory

We apply the quantum Singwi-Tosi-Land-Sjolander (QSTLS) theory for a study of many-body effects in the quasi-two-dimensional (Q2D) electron liquid (EL) in GaAs/AlxGa1-xAs heterojunctions. The effect of the layer thickness is included through a variational approach. We have calculated the density, spin-density static structure factors, spin-dependent pair distribution functions (PDF) and compared our results with those of two-dimensional (2D) EL given in earlier papers. Using the static structure factors (SSF) we have calculated various dynamic correlation functions such as spin-dependent local-field factors (LFF) and effective potentials of the Q2D EL. We have also calculated the inverse static dielectric function of the 2D and Q2D EL using different approximations. We find that the effect of finite thickness on the dielectric function is remarkable and at the intermediate values of wave number q there is a significant difference between the QSTLS and STLS results.

cond-mat.mes-hall↗

arXiv2003

Spin-dependent correlation in two-dimensional electron liquids at arbitrary degeneracy and spin-polarization: CHNC approach

We apply the classical mapping technique developed recently by Dharma-wardana and Perrot for a study of the uniform two-dimensional electron system at arbitrary degeneracy and spin-polarization. Pair distribution functions, structure factors, the Helmhotz free energy, and the compressibility are calculated for a wide range of parameters. It is shown that at low temperatures T/ T_F <0.1, T_F being the Fermi temperature, our results almost reduce to those of zero-temperature analyses. In the region T/ T_F >= 1, the finite temperature effects become considerable at high densities for all spin-polarizations. We find that, in our approximation without bridge functions, the finite temperature electron system in two dimensions remains to be paramagnetic fluid until the Wigner crystallization density. Our results are compared with those of three-dimensional system and indicated are the similarities in temperature, spin-polarization, and density dependencies of many physical properties.

cond-mat.str-el↗