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arXiv · 2006.05658

Development of a Neutron Imaging Sensor using INTPIX4-SOI Pixelated Silicon Devices

Y. Kamiya·T. Miyoshi·H. Iwase·T. Inada·A. Mizushima·Y. Mita·K. Shimazoe·H. Tanaka·I. Kurachi·Y. Arai
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Abstract

We have developed a neutron imaging sensor based on an INTPIX4-SOI pixelated silicon device. Neutron irradiation tests are performed at several neutron facilities to investigate sensor's responses for neutrons. Detection efficiency is measured to be around $1.5$\% for thermal neutrons. Upper bound of spatial resolution is evaluated to be $4.1 \pm 0.2 ~\mu$m in terms of a standard deviation of the line spread function.

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Y. Kamiya, T. Miyoshi, H. Iwase, T. Inada, A. Mizushima, Y. Mita, K. Shimazoe, H. Tanaka, I. Kurachi, Y. Arai. 2020-06-10. Development of a Neutron Imaging Sensor using INTPIX4-SOI Pixelated Silicon Devices. https://doi.org/10.1016/j.nima.2020.164400

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